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参数资料
| 型号： | IPD25CNE8NG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶体管 |
| 文件页数： | 1/13页 |
| 文件大小： | 658K |
| 代理商： | IPD25CNE8NG |
IPB26CNE8N G IPD25CNE8N G
IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
Opti
MOS
2 Power-Transistor
Features
N-channel, normal level
Excellent gate charge x
R
DS(on)
product (FOM)
Very low on-resistance
R
DS(on)
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1)
for target application
Ideal for high-frequency switching and synchronous rectification
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
35
A
T
C
=100 °C
25
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
140
Avalanche energy, single pulse
E
AS
I
D
=35 A,
R
GS
=25
65
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=35 A,
V
DS
=68 V,
d
i
/d
t
=100 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
3)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
71
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
3)
T
jmax
=150°C and duty cycle D=0.01 for Vgs<-5V
Value
1)
J-STD20 and JESD22
2)
see figure 3
V
DS
85
V
R
DS(on),max (TO252)
25
m
I
D
35
A
Product Summary
Type
IPB26CNE8N G
IPD25CNE8N G
IPI26CNE8N G
IPP26CNE8N G
IPU25CNE8N G
Package
PG-TO263-3
PG-TO252-3
PG-TO262-3
PG-TO220-3
PG-TO251-3
Marking
26CNE8N
25CNE8N
26CNE8N
26CNE8N
25CNE8N
Rev. 1.0
page 1
2006-02-17
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