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参数资料
| 型号： | IPD400N06NG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢ Power-Transistor |
| 中文描述： | 的OptiMOS㈢功率晶体管 |
| 文件页数： | 3/9页 |
| 文件大小： | 361K |
| 代理商： | IPD400N06NG |
IPD400N06N G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
490
650
pF
Output capacitance
C
oss
-
130
170
Reverse transfer capacitance
C
rss
-
36
54
Turn-on delay time
t
d(on)
-
9
13
ns
Rise time
t
r
-
24
36
Turn-off delay time
t
d(off)
-
24
36
Fall time
t
f
-
23
35
Gate Charge Characteristics
3)
Gate to source charge
Q
gs
-
2.9
3.9
nC
Gate charge at threshold
Q
g(th)
-
1.5
1.9
Gate to drain charge
Q
gd
-
5.7
8.5
Switching charge
Q
sw
-
7.1
10
Gate charge total
Q
g
-
13
17
Gate plateau voltage
V
plateau
-
6.0
-
V
Output charge
Q
oss
V
DD
=30 V,
V
GS
=0 V
-
4.9
6
Reverse Diode
Diode continous forward current
I
S
-
-
30
A
Diode pulse current
I
S,pulse
-
-
108
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=27 A,
T
j
=25 °C
-
0.96
1.3
V
Reverse recovery time
t
rr
-
31
40
ns
Reverse recovery charge
Q
rr
-
40
50
nC
3)
See figure 16 for gate charge parameter definition
V
R
=30 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=30 V,
f
=1 MHz
V
DD
=30 V,
V
GS
=10 V,
I
D
=27 A,
R
G
=22
V
DD
=30 V,
I
D
=27 A,
V
GS
=0 to 10 V
Rev. 1.1
page 3
2006-04-20
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPD400N06NG_08 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS? Power-Transistor Features N-channel enhancement - normal level Avalanche rated |
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| IPD40N03S4L-08 | 功能描述:MOSFET N-Channel 30V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD40N03S4L-08_10 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS-T2 Power-Transistor |
| IPD40N03S4L08ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel |
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