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参数资料
| 型号： | IPF12N03LBG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶体管 |
| 文件页数： | 3/12页 |
| 文件大小： | 427K |
| 代理商： | IPF12N03LBG |
IPD12N03LB G IPS12N03LB G
IPU12N03LB G IPF12N03LB G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
1000
1300
pF
Output capacitance
C
oss
-
360
480
Reverse transfer capacitance
C
rss
-
49
74
Turn-on delay time
t
d(on)
-
6
9
ns
Rise time
t
r
-
5
7
Turn-off delay time
t
d(off)
-
18
27
Fall time
t
f
-
2.6
4
Gate Charge Characteristics
6)
Gate to source charge
Q
gs
-
3
4
nC
Gate charge at threshold
Q
g(th)
-
1.6
2.2
Gate to drain charge
Q
gd
-
2.1
3
Switching charge
Q
sw
-
4
5
Gate charge total
Q
g
-
8
11
Gate plateau voltage
V
plateau
-
3.2
-
V
Gate charge total, sync. FET
Q
g(sync)
V
GS
=10 V,
I
D
=30 A
-
7
9
nC
Output charge
Q
oss
V
DD
=15 V,
V
GS
=0 V
-
8
11
Reverse Diode
Diode continous forward current
I
S
-
-
30
A
Diode pulse current
I
S,pulse
-
-
210
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
-
0.93
1.2
V
Reverse recovery charge
Q
rr
V
R
=15 V,
I
F
=
I
S
,
d
i
F
/d
t
=400 A/μs
-
-
10
nC
6)
See figure 16 for gate charge parameter definition
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
V
DD
=15 V,
V
GS
=10 V,
I
D
=15 A,
R
G
=2.7
V
DD
=15 V,
I
D
=15 A,
V
GS
=0 to 5 V
Rev. 1.5
page 3
2006-05-15
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPF135N03L G | 功能描述:MOSFET N-CH 30V 30A 13.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPF135N03LG | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS3 Power-Transistor |
| IPF13N03LA | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
| IPF13N03LA G | 功能描述:MOSFET N-CH 25V 30A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPF13N03LAG | 制造商:Infineon Technologies AG 功能描述:SP000017610_Power MOSFET |
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