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参数资料
| 型号： | IPI26CN10NG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶体管 |
| 文件页数： | 1/13页 |
| 文件大小： | 710K |
| 代理商： | IPI26CN10NG |
IPB26CN10N G IPD25CN10N G
IPI26CN10N G IPP26CN10N G IPU25CN10N G
Opti
MOS
2 Power-Transistor
Features
N-channel, normal level
Excellent gate charge x
R
DS(on)
product (FOM)
Very low on-resistance
R
DS(on)
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1)
for target application
Ideal for high-frequency switching and synchronous rectification
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
35
A
T
C
=100 °C
25
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
140
Avalanche energy, single pulse
E
AS
I
D
=35 A,
R
GS
=25
65
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=35 A,
V
DS
=80 V,
d
i
/d
t
=100 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
3)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
71
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
3)
T
jmax
=150°C and duty cycle D=0.01 for Vgs<-5V
Value
1)
J-STD20 and JESD22
2)
see figure 3
V
DS
100
V
R
DS(on),max (TO252)
25
m
I
D
35
A
Product Summary
Type
IPB26CN10N G
IPD25CN10N G
IPI26CN10N G
IPP26CN10N G
IPU25CN10N G
Package
PG-TO263-3
PG-TO252-3
PG-TO262-3
PG-TO220-3
PG-TO251-3
Marking
26CN10N
25CN10N
26CN10N
26CN10N
25CN10N
Rev. 1.01
page 1
2006-06-02
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| IPI26CNE8NG | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
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| IPI320N20N3 G | 功能描述:MOSFET N-Channel 200V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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