型号: | IPP032N06N3G |
厂商: | INFINEON TECHNOLOGIES AG |
元件分类: | JFETs |
英文描述: | 120 A, 60 V, 0.0032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
封装: | GREEN, PLASTIC, TO-220, 3 PIN |
文件页数: | 1/11页 |
文件大小: | 999K |
代理商: | IPP032N06N3G |
相关PDF资料 |
PDF描述 |
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IPR1Z1AD7/1LOS | PUSHBUTTON SWITCH, SPST, LATCHED, 0.1A, 24VDC, PANEL MOUNT-THREADED |
IPR1Z1AD5LOS | PUSHBUTTON SWITCH, SPST, LATCHED, 0.1A, 24VDC, PANEL MOUNT-THREADED |
IPR1Z1AD3LOY | PUSHBUTTON SWITCH, SPST, LATCHED, 0.1A, 24VDC, PANEL MOUNT-THREADED |
IPR1Z1AD2LOG | PUSHBUTTON SWITCH, SPST, LATCHED, 0.1A, 24VDC, PANEL MOUNT-THREADED |
IPR1SAD9LOB | PUSHBUTTON SWITCH, SPST, LATCHED, 0.1A, 24VDC, PANEL MOUNT-THREADED |
相关代理商/技术参数 |
参数描述 |
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IPP032N06N3GHKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Rail/Tube |
IPP032N06N3GXKSA1 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
IPP034N03L G | 功能描述:MOSFET N-CH 30V 80A 3.4mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
IPP034N03L G | 制造商:Infineon Technologies AG 功能描述:MOSFET N CH 80A 30V PG-TO220-3 制造商:Infineon Technologies AG 功能描述:MOSFET, N CH, 80A, 30V, PG-TO220-3 制造商:Infineon Technologies AG 功能描述:MOSFET, N CH, 30V, 80A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; No. of Pins:3 ;RoHS Compliant: Yes |
IPP034N03LG | 制造商:Infineon Technologies AG 功能描述: 制造商:Rochester Electronics LLC 功能描述: |