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参数资料
| 型号： | IPP032N06N3G |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | JFETs |
| 英文描述： | 120 A, 60 V, 0.0032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | GREEN, PLASTIC, TO-220, 3 PIN |
| 文件页数： | 7/11页 |
| 文件大小： | 999K |
| 代理商： | IPP032N06N3G |
IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I 94R"V 9H T V T
R 9H"[Z#4R"I 9 T V T
@1B
1=5D
5B
V =H
@1B
1=5D
5B
V =H
7 Typ. transfer characteristics
8 Typ. forward transconductance
I 94R"V =H K
V 9Hg5*gI 9gR 9H"[Z#YMd
g R_4R"I 9 T V T
@1B
1=5D
5B
T V
.
.
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0
2
4
6
8
0
80
160
240
320
400
480
I D [A]
R
D
S
(o
n
)
[m
]
T
T
0
50
100
150
200
250
300
350
400
0
2
4
6
V GS [V]
I
D
[A
]
0
40
80
120
160
200
240
280
0
50
100
150
200
250
300
I D [A]
g
fs
[S
]
.
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V DS [V]
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]
+ 5F
@175
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPP032N06N3GHKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Rail/Tube |
| IPP032N06N3GXKSA1 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPP034N03L G | 功能描述:MOSFET N-CH 30V 80A 3.4mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPP034N03L G | 制造商:Infineon Technologies AG 功能描述:MOSFET N CH 80A 30V PG-TO220-3 制造商:Infineon Technologies AG 功能描述:MOSFET, N CH, 80A, 30V, PG-TO220-3 制造商:Infineon Technologies AG 功能描述:MOSFET, N CH, 30V, 80A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; No. of Pins:3 ;RoHS Compliant: Yes |
| IPP034N03LG | 制造商:Infineon Technologies AG 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
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