参数资料
型号: IPS031G
厂商: International Rectifier
文件页数: 1/11页
文件大小: 0K
描述: IC MOSFET PWR SW SGL 12A 8-SOIC
标准包装: 95
类型: 低端
输入类型: 非反相
输出数: 1
导通状态电阻: 45 毫欧
电流 - 输出 / 通道: 2.2A
电流 - 峰值输出: 15A
电源电压: 4 V ~ 6 V
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 管件
其它名称: *IPS031G
Data Sheet No.PD 60151-J
IPS031G/IPS032G
SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH
Features
? Over temperature shutdown
? Over current shutdown
? Active clamp
? Low current & logic level input
? E.S.D protection
Product Summary
R ds(on) 70m ? (max)
V clamp 50V
Ishutdown
12A
Description
The IPS031G/IPS032G are fully protected single/dual
low side SMART POWER MOSFETs that feature over-
current, over-temperature, ESD protection and drain
to source active clamp.These devices combine a
HEXFET ? POWER MOSFET and a gate driver. They
offer full protection and high reliability required in
harsh environments. The driver allows short switch-
ing times and provides efficient protection by turning
off the power MOSFET when the temperature ex-
ceeds 165 o C or when the drain current reaches 12A.
The device restarts once the input is cycled. The
avalanche capability is significantly enhanced by the
active clamp and covers most inductive load demag-
netizations.
Typical Connection
R in series
(if needed)
T on /T off
Packages
8-Lead SOIC
IPS031G
Load
D
1.5 μ s
16-Lead SOIC
IPS032G
(Dual)
Q
IN
control
S
S
Logic signal
(Refer to lead assignment for correct pin assignment)
www.irf.com
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