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参数资料
| 型号： | IPS031G |
| 厂商： | International Rectifier |
| 文件页数： | 3/11页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET PWR SW SGL 12A 8-SOIC |
| 标准包装： | 95 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 45 毫欧 |
| 电流 - 输出 / 通道： | 2.2A |
| 电流 - 峰值输出： | 15A |
| 电源电压： | 4 V ~ 6 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 管件 |
| 其它名称： | *IPS031G |
IPS031G/IPS032G
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Units
Vds (max)
Continuous Drain to Source voltage
—
35
VIH
VIL
High level input voltage
Low level input voltage
4
0
6
0.5
V
Ids
Continuous drain current
Tamb=85 o C
(TAmbient = 85 o C, IN = 5V, rth = 100 o C/W, Tj = 125 o C) IPS031G
(TAmbient = 85 o C, IN = 5V, rth = 85 o C/W, Tj = 125 o C) IPS032G
—
—
2.2
1.65
A
Rin Recommended resistor in series with IN pin
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
0.2
—
5
1
k ?
μ S
Fr-I sc (2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
Static Electrical Characteristics
(Tj = 25 o C unless otherwise specified.)
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rds(on)
Rds(on)
Idss
@Tj=25 o C
Idss2
ON state resistance Tj = 25 o C
ON state resistance Tj = 150 o C
Drain to source leakage current
Drain to source leakage current
20
—
0
0
45
75
0.5
5
60
100
25
50
m ?
μ A
Vin = 5V, Ids = 1A
Vcc = 14V, Tj = 25 o C
Vcc = 40V, Tj = 25 o C
@Tj=25 o C
V clamp 1
Drain to source clamp voltage 1
47
52
56
Id = 20mA (see Fig.3 & 4)
V clamp 2
Vin clamp
Vth
Iin, -on
Iin, -off
Drain to source clamp voltage 2
IN to source clamp voltage
IN threshold voltage
ON state IN positive current
OFF state IN positive current
50
7
1
25
50
53
8.1
1.6
90
130
60
9.5
2
200
250
V
μ A
Id=Ishutdown (see Fig.3 & 4)
Iin = 1 mA
Id = 50mA, Vds = 14V
Vin = 5V
Vin = 5V
over-current triggered
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 5 ? (IPS031), Resistive Load = 3 ? (IPS031S), Rinput = 50 ?, 100 μ s pulse,T j = 25 o C, (unless
otherwise specified).
Symbol Parameter
Min.
Typ. Max. Units Test Conditions
Ton
Tr
Trf
T off
Tf
Qin
Turn-on delay time
Rise time
Time to 130% final Rds(on)
Turn-off delay time
Fall time
Total gate charge
0.05
0.4
—
0.8
0.5
—
0.3
1
8
2
1.5
1.1
0.6
2
—
3.5
2.5
—
μ s
nC
See figure 2
See figure 2
Vin = 5V
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