参数资料
| 型号： | IPS031S |
| 厂商： | International Rectifier |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET PWR SW SGL 12A D2-PAK |
| 标准包装： | 50 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 45 毫欧 |
| 电流 - 输出 / 通道： | 2.8A |
| 电流 - 峰值输出： | 18A |
| 电源电压： | 4 V ~ 6 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
| 其它名称： | *IPS031S |
IPS031(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25 o C unless otherwise specified). PCB mounting uses the standard foot-
print with 70 μ m copper thickness.
Symbol Parameter
Vds
Maximum drain to source voltage
Min.
—
Max.
47
Units
Test Conditions
Vin
Iin, max
Maximum input voltage
Maximum IN current
-0.3
-10
7
+10
V
mA
Isd cont.
Diode max. continuous current (1)
rth=62 o C/W IPS031
—
2.8
TO220 free air
rth=5 o C/W
rth=80 o C/W
IPS031
IPS031S
—
—
18
2.2
A
TO220 with Rth=5 o C/W
SMD220 Std. footprint
Isd pulsed Diode max. pulsed current (1)
Pd Maximum power dissipation (1)
—
18
(rth=62 o C/W) IPS031
(rth=80 o C/W) IPS031S
—
—
2
1.56
W
ESD1
ESD2
T stor.
Electrostatic discharge voltage (Human Body)
Electrostatic discharge voltage (Machine Model)
Max. storage temperature
—
—
-55
4
0.5
150
kV
C=100pF, R=1500 ?,
C=200pF, R=0 ?, L=10 μ H
Tj max.
Tlead
Max. junction temperature
Lead temperature (soldering, 10 seconds)
-40
—
+150
300
o
C
Thermal Characteristics
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth
Rth
1
2
Thermal
Thermal
resistance
resistance
free air
junction to case
—
—
60
3
—
—
TO-220
C/W
Rth
Rth
Rth
1
2
3
Thermal
Thermal
Thermal
resistance
resistance
resistance
with standard footprint
with 1" square footprint
junction to case
—
—
—
80
60
3
—
—
—
o
D 2 PAK (SMD220)
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Units
Vds (max)
Continuous drain to source voltage
—
35
VIH
VIL
High level input voltage
Low level input voltage
4
0
6
0.5
V
I ds
Continuous drain current
Tamb=85 o C
(TAmbient = 85 o C, IN = 5V, rth = 60 o C/W, Tj = 125 o C) IPS031
(TAmbient = 85 o C, IN = 5V, rth = 80 o C/W, Tj = 125 o C) IPS031S
—
—
3.1
2.8
A
Rin Recommended resistor in series with IN pin
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
0.2
—
5
1
k ?
μ S
Fr-Isc (2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application. Notes.
2
www.irf.com
相关PDF资料 |
PDF描述 |
|---|---|
| IPS032G | IC MOSFET PWR SW DUAL 12A 16SOIC |
| IPS041LTR | IC MOSFET PWR SW 2A SOT-223 |
| IPS042GTR | IC MOSFET PWR SW DUAL 2A 8-SOIC |
| IPS0551T | IC MOSFET PWR SW 40V 100A TO-220 |
| IPS1011RTRLPBF | IC IPS SW LOW SIDE DPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IPS031SPBF | 制造商:International Rectifier 功能描述:Power Switch Lo Side 2.2A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:MOSFET SMART SWITCH D2-PAK |
| IPS031STRR | 功能描述:功率驱动器IC 50V 12A 1.5us FET Switch 60mOhm RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IPS032G | 功能描述:IC MOSFET PWR SW DUAL 12A 16SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:1,000 系列:- 类型:高端/低端驱动器 输入类型:SPI 输出数:8 导通状态电阻:850 毫欧，1.6 欧姆 电流 - 输出 / 通道:205mA，410mA 电流 - 峰值输出:500mA，1A 电源电压:9 V ~ 16 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:20-SOIC（0.295"，7.50mm 宽） 供应商设备封装:PG-DSO-20-45 包装:带卷 (TR) |
| IPS03N03LA | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applications |
| IPS03N03LA G | 功能描述:MOSFET N-CH 25V 90A IPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。