- 您现在的位置：买卖IC网 > PDF目录384485 > IPS511 (International Rectifier) FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH PDF资料下载
参数资料
| 型号： | IPS511 |
| 厂商： | International Rectifier |
| 英文描述： | FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH |
| 中文描述： | 充分保护高压侧功率MOSFET开关 |
| 文件页数： | 3/12页 |
| 文件大小： | 191K |
| 代理商： | IPS511 |
IPS511/IPS511S
www.irf.com
3
Symbol Parameter
Rds(on)
ON state resistance Tj = 25
o
C
@Tj=25
o
C
Rds(on)
ON state resistance @ Vcc = 6V
(Vcc=6V)
Rds(on)
@Tj=150
o
C
Vcc oper. Operating voltage range
V
clamp 1
Vcc to OUT clamp voltage 1
V
clamp 2
Vcc to OUT clamp voltage 2
Vf
Body diode forward voltage
Icc off
Supply current when OFF
Icc on
Supply current when ON
Icc ac
Ripple current when ON (AC RMS)
Vdgl
Low level diagnostic output voltage
Ioh
Output leakage current
Iol
Output leakage current
Idg
leakage
Diagnostic output leakage current
Vih
IN high threshold voltage
Vil
IN low threshold voltage
Iin, on
On state IN positive current
In hyst.
Input hysteresis
Min.
—
Typ.
110
Max. Units Test Conditions
135
Vin = 5V, Iout = 2.5A
—
110
135
ON state resistance Tj = 150
o
C
—
200
—
Vin = 5V, Iout = 2.5A
5.5
50
—
—
—
—
—
—
—
0
—
56
58
0.9
16
0.7
20
0.15
60
—
35
—
65
1.2
50
2
—
0.4
110
25
Id = 10mA
(see Fig.1 & 2)
Id = Isd
(see Fig.1 & 2)
Id = 2.5A, Vin = 0V
Vin = 0V, Vout = 0V
Vin = 5V
Vin = 5V
Idg = 1.6 mA
Vout = 6V
Vout = 0V
μ
A
mA
μ
A
V
—
—
1
—
0.1
—
2.3
1.95
70
0.25
10
3
—
200
0.5
Vdg = 5.5V
μ
A
V
Vin = 5V
Static Electrical Characteristics
(Tj = 25
o
C, Vcc = 14V unless otherwise specified.)
m
V
Vin = 5V, Iout = 1A
μ
A
V
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Vcc
Continuous Vcc voltage
VIH
High level input voltage
VIL
Low level input voltage
Iout
Continuous output current
Tamb=85
o
C
(TAmbient = 85
o
C, Tj = 125
o
C, Rth < 60
o
C/W) IPS511
(TAmbient = 85
o
C, Tj = 125
o
C, Rth = 80
o
C/W) IPS511
Rin
Recommended resistor in series with IN pin
Rdg
Recommended resistor in series with DG pin
Min.
5.5
4
-0.3
Max. Units
35
5.5
0.9
—
—
4
10
1.7
1.5
6
20
V
A
k
相关PDF资料 |
PDF描述 |
|---|---|
| IPS511S | FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH |
| IPS5551T | FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH |
| IPU05N03LA | OptiMOS 2 Power-Transistor |
| IQ82C55A | CMOS Programmable Peripheral Interface |
| IQ82C55AZ | CMOS Programmable Peripheral Interface |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IPS511E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PERIPHERAL DRIVER|1 DRIVER|MOS|LLCC|18PIN|CERAMIC |
| IPS511F | 功能描述:IC MOSFET HS PWR SW 5A TO-220FP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:1,000 系列:- 类型:高端/低端驱动器 输入类型:SPI 输出数:8 导通状态电阻:850 毫欧，1.6 欧姆 电流 - 输出 / 通道:205mA，410mA 电流 - 峰值输出:500mA，1A 电源电压:9 V ~ 16 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:20-SOIC（0.295"，7.50mm 宽） 供应商设备封装:PG-DSO-20-45 包装:带卷 (TR) |
| IPS511G | 功能描述:功率驱动器IC IPS 1 Ch Low Side Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IPS511GPBF | 制造商:International Rectifier 功能描述:IC MOSFET SMART SWITCH SO-8 |
| IPS511GTR | 功能描述:功率驱动器IC High Side Pow FET 150mOhm 50V 5A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。