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参数资料
| 型号： | IPS521G |
| 厂商： | International Rectifier |
| 英文描述： | FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH |
| 中文描述： | 充分保护高压侧功率MOSFET开关 |
| 文件页数： | 2/9页 |
| 文件大小： | 137K |
| 代理商： | IPS521G |
IPS521G
2
www.irf.com
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth1
Thermal resistance with standard footprint
—
a
Rth2
Thermal resistance with 1" square footprint
—
&
a
Thermal Characteristics
8 Lead SOIC
oC/W
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (Tj = 25
oC unless otherwise specified).
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vout
Maximum output voltage
Vcc-50 Vcc+0.3
Voffset
Maximum logic ground to load ground offset Vcc-50 Vcc+0.3
Vin
Maximum Input voltage
-0.3
5.5
Iin, max
Maximum positive IN current
-5
10
mA
Vdg
Maximum diagnostic output voltage
-0.3
5.5
V
Idg, max
Maximum diagnostic output current
-1
10
mA
Isd cont.
Diode max. permanent current (1)
(rth = 125oC/W)
—
1.4
Isd pulsed Diode max. pulsed current (1)
—10
ESD1
Electrostatic discharge voltage (Human Body)
—
4
C=100pF, R=1500
,
ESD2
Electrostatic discharge voltage (Machine Model)
—
0.5
C=200pF, R=0
, L=10H
Pd
Maximum power dissipation
(1)
(rth=125oC/W)
—
1
W
Tj max.
Max. storage & operating junction temp.
-40
+150
Vcc max.
Maximum Vcc voltage
—
50
V
A
kV
oC
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Units
Vcc
Continuous Vcc voltage
5.5
35
VIH
High level input voltage
4
5.5
VIL
Low level input voltage
-0.3
0.9
Iout
Continuous output current
Tc=85
oC
(TAmbient = 85oC, Tj = 125oC, Rth = 100oC/W)
—
1.6
A
Rin
Recommended resistor in series with IN pin
4
6
Rdg
Recommended resistor in series with DG pin
10
20
V
k
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