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参数资料
| 型号： | IPS521G |
| 厂商： | International Rectifier |
| 英文描述： | FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH |
| 中文描述： | 充分保护高压侧功率MOSFET开关 |
| 文件页数： | 3/9页 |
| 文件大小： | 137K |
| 代理商： | IPS521G |
IPS521G
www.irf.com
3
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rds(on)
ON state resistance Tj = 25
oC
—
80
100
@Tj=25oC
Rds(on)
ON state resistance @ Vcc = 6V
—
80
100
(Vcc=6V)
Rds(on)
ON state resistance Tj = 150
oC—
125
160
Vin = 5V, Iout = 5A
@Tj=150oC
Vcc oper. Operating voltage range
5.5
—
35
V clamp 1 Vcc to OUT clamp voltage 1
50
55
—
Id = 10mA (see Fig.1 & 2)
V clamp 2 Vcc to OUT clamp voltage 2
—
56
65
Vf
Body diode forward voltage
—
0.9
1.2
Id = 2.5A, Vin = 0V
Icc off
Supply current when OFF
—
13
50
AVin = 0V, Vout = 0V
Icc on
Supply current when ON
—
0.6
2
mA
Vin = 5V
Icc ac
Ripple current when ON (AC RMS)
—20
—
AVin = 5V
Vdgl
Low level diagnostic output voltage
—
0.4
—
V
Idg = 1.6 mA
Ioh
Output leakage current
—
50
120
Vout = 6V
Iol
Output leakage current
0
—
25
Vout = 0V
Idg
leakage
Diagnostic output leakage current
—
10
Vdg = 5.5V
Vih
IN high threshold voltage
—
2.2
3
Vil
IN low threshold voltage
1
1.9
—
Iin, on
On state IN positive current
—
70
200
A
Vin = 5V
In hyst.
Input hysteresis
0.1
0.25
0.5
V
Static Electrical Characteristics
(Tj = 25
oC, Vcc = 14V unless otherwise specified.)
m
Vin = 5V, Iout = 5A
Id = Isd (see Fig.1 & 2)
V
Vin = 5V, Iout = 2.5A
A
V
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 2.8, Tj = 25
oC, (unless otherwise specified).
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Tdon
Turn-on delay time
a
10
40
Tr1
Rise time to Vout = Vcc - 5V
a
25
60
Tr2
Rise time Vcc - 5V to Vout = 90% of Vcc
—
130
200
dV/dt (on) Turn ON dV/dt
a
0.7
2
V/
s
Eon
Turn ON energy
—
1500
—
J
Tdoff
Turn-off delay time
—
35
70
Tf
Fall time to Vout = 10% of Vcc
—
16
50
dV/dt (off) Turn OFF dV/dt
a
0.9
3
V/
s
Eoff
Turn OFF energy
—
250
—
J
Tdiag
Vout to Vdiag propagation delay
—
5
15
s
See figure 6
See figure 3
s
See figure 4
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