参数资料
型号: IPS521G
厂商: International Rectifier
文件页数: 2/9页
文件大小: 0K
描述: IC MOSFET HS PWR SW 5A 8-SOIC
标准包装: 95
类型: 高端
输入类型: 非反相
输出数: 1
导通状态电阻: 80 毫欧
电流 - 输出 / 通道: 1.6A
电流 - 峰值输出: 10A
电源电压: 5.5 V ~ 35 V
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 管件
其它名称: *IPS521G
IPS521G
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (Tj = 25 o C unless otherwise specified).
Symbol Parameter
Vout
Maximum output voltage
Min.
Vcc-50
Max.
Vcc+0.3
Units
Test Conditions
Voffset
Maximum logic ground to load ground offset Vcc-50
Vcc+0.3
V
Vin
Maximum Input voltage
-0.3
5.5
Iin, max
Vdg
Idg, max
Maximum positive IN current
Maximum diagnostic output voltage
Maximum diagnostic output current
-5
-0.3
-1
10
5.5
10
mA
V
mA
Isd cont.
Diode max. permanent current (1)
(rth = 125 o C/W)
Isd pulsed Diode max. pulsed current (1)
1.4
10
A
ESD1
Electrostatic discharge voltage (Human Body)
4
C=100pF, R=1500 ?,
ESD2
Electrostatic discharge voltage (Machine Model)
0.5
kV
C=200pF, R=0 ?, L=10 μ H
Maximum power dissipation
Pd
(1)
(rth=125 o C/W)
1
W
C
Tj max.
Vcc max.
Max. storage & operating junction temp.
Maximum Vcc voltage
-40
+150
50
o
V
Thermal Characteristics
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth1
Rth2
Thermal resistance with standard footprint
Thermal resistance with 1" square footprint
   
a
a
o
C/W 8 Lead SOIC
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Units
Vcc
Continuous Vcc voltage
5.5
35
VIH
VIL
Iout
Tc=85 o C
Rin
Rdg
High level input voltage
Low level input voltage
Continuous output current
(TAmbient = 85 o C, Tj = 125 o C, Rth = 100 o C/W)
Recommended resistor in series with IN pin
Recommended resistor in series with DG pin
4
-0.3
4
10
5.5
0.9
1.6
6
20
V
A
k ?
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
2
www.irf.com
相关PDF资料
PDF描述
REC3-483.3SRWZ/H6/C CONV DC/DC 3W 18-72VIN 3.3VOUT
REC3-483.3SRWZ/H6/A CONV DC/DC 3W 18-72VIN 3.3VOUT
HBC06DRAS CONN EDGECARD 12POS R/A .100 SLD
A9CAG-1308F FLEX CABLE - AFG13G/AF13/AFE13T
V8P10HM3/87A DIODE 8A 100V SCHOTTKY TO277A
相关代理商/技术参数
参数描述
IPS521GPBF 制造商:International Rectifier 功能描述:IC MOSFET SMART SWITCH SO-8
IPS521GTR 功能描述:功率驱动器IC High Side Pow FET 100mOhms 50V 10A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IPS521GTRPBF 制造商:International Rectifier 功能描述:Power Switch Hi Side 1.6A 8-Pin SOIC T/R
IPS521PBF 制造商:International Rectifier 功能描述:Power Switch Hi Side 2.2A 5-Pin(5+Tab) TO-220AB 制造商:International Rectifier 功能描述:IC MOSFET SMART SWITCH TO-220-5
IPS521S 功能描述:IC MOSFET HS PWR SW 5A D2PAK RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 内部开关 系列:- 标准包装:1,000 系列:- 类型:高端/低端驱动器 输入类型:SPI 输出数:8 导通状态电阻:850 毫欧,1.6 欧姆 电流 - 输出 / 通道:205mA,410mA 电流 - 峰值输出:500mA,1A 电源电压:9 V ~ 16 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:20-SOIC(0.295",7.50mm 宽) 供应商设备封装:PG-DSO-20-45 包装:带卷 (TR)