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参数资料
| 型号： | IR11682SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 11/22页 |
| 文件大小： | 0K |
| 描述： | IC RECTIFIER DRIVER DUAL 8-SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 100ns |
| 电流 - 峰： | 1A |
| 配置数： | 1 |
| 输出数： | 2 |
| 电源电压： | 8.6 V ~ 18 V |
| 工作温度： | -25°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
IR11682S
Detailed Pin Description
VCC: Power Supply
This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to
turn off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC.
To prevent noise problems, a bypass ceramic capacitor connected to Vcc and COM should be placed as
close as possible to the IR11682. This pin is not internally clamped.
GND: Ground
This is ground potential pin of the integrated control circuit.
The internal devices and gate driver are
referenced to this point.
VD1 and VD2: Drain Voltage Sense
These are the two high-voltage pins used to sense the drain voltage of the two SR power MOSFETs. Routing
between the drain of the MOSFET and the IC pin must be particularly optimized.
Additional RC filter in not necessary but could be added to VD1 and VD2 pins to increase noise immunity.
For applications which VD voltage exceeds 100V, a 1Kohm to 2Kohm VD resistor is recommended to be
added between the drain of SR MOSFET and VD pin. The VD resistor helps to limit the switching loss of VD
pins.
VS1 and VS2: Source Voltage Sense
These are the two differential sense pins for the two source pins of the two SR power MOSFETs. This pin
must not be connected directly to the GND pin (pin 7) but must be used to create a Kelvin contact as close as
possible to the power MOSFET source pin.
GATE1 and GATE2: Gate Drive Outputs
These are the two gate drive outputs of the IC. The gate voltage is internally clamped and has a +1A/-4A
peak drive capability. Although this pin can be directly connected to the synchronous rectifier (SR) MOSFET
gate, the use of gate resistor is recommended (specifically when putting multiple MOSFETs in parallel). Care
must be taken in order to keep the gate loop as short and as small as possible in order to achieve optimal
switching performance.
www.irf.com
11
? 2010 International Rectifier
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR11682STRPBF | 功能描述:开关变换器、稳压器与控制器 Dual Smartrectifier Drvr IC RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| IR1168S | 制造商:IRF 制造商全称:International Rectifier 功能描述:DUAL SMART RECTIFIER DRIVER IC |
| IR1168SPBF | 功能描述:开关变换器、稳压器与控制器 200V DUAL SMART HI SPEED SR CTRLLER RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| IR1168SPBF | 制造商:International Rectifier 功能描述:Smart Rectifier Driver IC |
| IR1168STRPBF | 功能描述:开关变换器、稳压器与控制器 Dual Smartrectifier Drvr IC RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
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