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| 型号： | IR11682SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 13/22页 |
| 文件大小： | 0K |
| 描述： | IC RECTIFIER DRIVER DUAL 8-SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 100ns |
| 电流 - 峰： | 1A |
| 配置数： | 1 |
| 输出数： | 2 |
| 电源电压： | 8.6 V ~ 18 V |
| 工作温度： | -25°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
IR11682S
General Description
The IR11682 Dual Smart Rectifier controller IC is the industry first dedicated high-voltage controller IC for
synchronous rectification in resonant converter applications. The IC can emulate the operation of the two
secondary rectifier diodes by correctly driving the synchronous rectifier (SR) MOSFETs in the two secondary
legs.
The core of this device are two high-voltage, high speed comparators which sense the drain to source voltage
of the MOSFETs differentially. The device current is sensed using the R DSON as a shunt resistance and the
GATE pin of the MOSFET is driven accordingly. Dedicated internal logic then manages to turn the power
device on and off in close proximity of the zero current transition.
IR11682 further simplifies synchronous rectifier control by offering the following power management features:
-Wide VCC operating range allows the IC to be directly powered from the converter output
-Shoot through protection logic that prevents both the GATE outputs from the IC to be high at the same time
-Device turn ON and OFF in close proximity of the zero current transition with low turn-on and turn-off
propagation delays; eliminates reactive power flow between the output capacitors and power transformer
-Internally clamped gate driver outputs that significantly reduce gate losses.
The SmartRectifier? control technique is based on sensing the voltage across the MOSFET and comparing it
with two negative thresholds to determine the turn on and off transitions for the device. The rectifier current is
sensed by the input comparators using the power MOSFET R DSON as a shunt resistance and its GATE is
driven depending on the level of the sensed voltage vs. the 3 thresholds shown below.
V Gate
V DS
V TH2
V TH1
V TH3
Figure 1: Input comparator thresholds
Turn-on phase
When the conduction phase of the SR FET is initiated, current will start flowing through its body diode,
generating a negative V DS voltage across it. The body diode has generally a much higher voltage drop than the
one caused by the MOSFET on resistance and therefore will trigger the turn-on threshold V TH2 .
When V TH2 is triggered, IR11682 will drive the gate of MOSFET on which will in turn cause the conduction
voltage VDS to drop down to I D *R DSON . This drop is usually accompanied by some amount of ringing, that
could trigger the input comparator to turn off; hence, a fixed Minimum On Time (MOT) blanking period is used
that will maintain the power MOSFET on for a minimum amount of time.
The fixed MOT limits the minimum conduction time of the secondary rectifiers and hence, the maximum
switching frequency of the converter.
www.irf.com
13
? 2010 International Rectifier
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR11682STRPBF | 功能描述:开关变换器、稳压器与控制器 Dual Smartrectifier Drvr IC RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| IR1168S | 制造商:IRF 制造商全称:International Rectifier 功能描述:DUAL SMART RECTIFIER DRIVER IC |
| IR1168SPBF | 功能描述:开关变换器、稳压器与控制器 200V DUAL SMART HI SPEED SR CTRLLER RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| IR1168SPBF | 制造商:International Rectifier 功能描述:Smart Rectifier Driver IC |
| IR1168STRPBF | 功能描述:开关变换器、稳压器与控制器 Dual Smartrectifier Drvr IC RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
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