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参数资料
| 型号： | IR20153STRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 4/15页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HI SIDE RECHARGE 8SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端 |
| 输入类型： | 反相 |
| 延迟时间： | 1.0µs |
| 电流 - 峰： | 400mA |
| 配置数： | 1 |
| 输出数： | 1 |
| 高端电压 - 最大（自引导启动）： | 150V |
| 电源电压： | 5 V ~ 20 V |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
IR20153S & (PbF)
Electrical Characteristics
Unless otherwise specified, VCC = 5V, VBS = 7V, VS = 0V, IN = 0V, RES = 5V, load R = 50 ? , C = 6.8nF (see Figure 3).
Unless otherwise noted, these specifications apply for an operating ambient temperature of T A =25 ° C.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
V CC Driver
Gate Supply Characteristics cont.
tres,on
RES-to-Output Turn-On Propogation Delay
-
1.0
2.0
μ sec
(50% input level to 10% [tplh] output levels)
Input Characteristics
VINH
VINL
RIN
VH_RES
VL_RES
RRES
High Logic Level Input Threshold
Low Logic Level Input Threshold
High Logic Level Input Resistance
High Logic Level RES Input Threshold
Low Logic Level RES Input Threshold
High Logic Level RES Input Resistance
3
-
40
3
-
40
-
-
100
-
-
100
-
1.4
220
-
1.4
220
V
V
k ?
V
V
k ?
Recharge Characteristics (see Figure 3a)
ton_rech Recharge Transistor Turn-On Propogation Delay
toff_rech Recharge Transistor Turn-Off Propogation Delay
7
-
11
0.3
15
0.9
μ sec
μ sec
VS = 5V
VRECH
Recharge Output Transistor On-State Voltage Drop
-
-
1.2
V
IS = 1mA, IN = 5V
Deadtime Characteristics
DTHOFF
DTHON
High Side Turn-Off to Recharge gate Turn-On
Recharge gate Turn-Off to High Side Turn-On0.
7
0.4
11
0.8
15
1.5
μ sec
μ sec
4
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