参数资料
型号: IR2086STRPBF
厂商: International Rectifier
文件页数: 2/9页
文件大小: 0K
描述: IC DRIVER FULL BRIDGE 16-SOIC
标准包装: 1
配置: 半桥
输入类型: 自振荡
电流 - 峰: 1.2A
配置数: 1
输出数: 4
高端电压 - 最大(自引导启动): 100V
电源电压: 9.5 V ~ 15 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC N
包装: 标准包装
其它名称: IR2086STRPBFDKR
IR2086S(PbF)
Absolute Maximum Ratings
V BIAS (V CC , V BS ) = 12V, C L = 1000 pF, and T A = 25 ° C unless otherwise specified.
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM. All currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
V CC
V B1,2
V S1,2
V HO1,2
V LO1,2
V CT
V CS
V DELAY
dV S /dt
I CC
Definition
Low side supply voltage
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side output voltage
CT pin voltage
Cs pin voltage
Delay pin voltage
Allowable offset voltage slew rate
Supply current
Min.
-0.3
-0.3
V B1,2 - 25
V B1,2 - 0.3
-0.3
-0.3
-0.3
-0.3
-50
Max.
25
150
V B1,2 + 0.3
V B1,2 + 0.3
V CC + 0.3
V CC + 0.3
V CC + 0.3
V CC + 0.3
+50
40
Units
Vdc
V/ns
mA
P D
Rth JA
T J
T S
T L
Package power dissipation
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
(16-lead SOIC)
(16-lead SOIC)
-55
-55
1.0
200
150
150
300
W
° C/W
° C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
V B1,2
V S1,2
V CC
I CC
R T
C T
fmax
T j
Definition
High side floating supply voltage
Steady state high side floating supply offset voltage
Supply voltage
Supply current
Timing resistor
Timing capacitor
Operating frequency (per channel)
Junction temperature
Min.
9.5
-5
9.5
10
47
-40
Max.
15
100
15
1
100
1000
500
125
Units
Vdc
mA
Kohms
pF
KHz
° C
Note1: Care should be taken to avoid output switching conditions where the Vs node flies inductively below ground by
more than 5V.
2
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