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| 型号： | IR2108STRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/23页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HALF BRIDGE 8SOIC |
| 标准包装： | 1 |
| 配置： | 半桥 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 220ns |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | IR2108SPBFDKR |
Data Sheet No. PD60161-R
IR2108 ( 4 ) (S) & (PbF)
Features
? Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
HALF-BRIDGE DRIVER
Packages
dV/dt immune 14-Lead SOIC
? Gate drive supply range from 10 to 20V
? Undervoltage lockout for both channels
? 3.3V, 5V and 15V input logic compatible
? Cross-conduction prevention logic
?
Matched propagation delay for both channels
? Lower di/dt gate driver for better
Dead-Time Ground Pins
Part
noise immunity
? Available in Lead-Free
HIN/LIN
no
none
Description
HIN/LIN
yes
The IR2108(4)(S) are high voltage, high speed
power MOSFET and IGBT drivers with depen-
IN/SD yes
dent high and low side referenced output
8-Lead SOIC
IR2108S IR21084S
14-Lead PDIP
IR21084
? High side output in phase with HIN input 8-Lead PDIP
? Low side output out of phase with LIN input IR2108
? Logic and power ground +/- 5V offset.
? Internal 540ns dead-time, and
programmable up to 5us with one 2106/2301//2108//2109/2302/2304 Feature Comparison
external R DT resistor (IR21084) Cross-
Input conduction
logic prevention
logic
2106/2301 COM
21064 VSS/COM
2108 Internal 540ns COM
21084 Programmable 0.54~5 μ s VSS/COM
2109/2302 Internal 540ns COM
21094 Programmable 0.54~5 μ s VSS/COM
2304 HIN/LIN yes Internal 100ns COM
channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS
or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or
IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
V CC
V CC
V B
HIN
HIN
HO
LIN
LIN
COM
V S
LO
TO
LOAD
up to 600V
IR2108
V CC
HIN
LIN
V CC
HIN
LIN
HO
V B
V S
IR21084
TO
LOAD
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to our
V SS
R DT
DT
V SS
COM
LO
Application Notes and DesignTips for proper
circuit board layout.
www.irf.com
1
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| IR2109 | 功能描述:IC DRIVER HALF-BRIDGE 8-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
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