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参数资料
| 型号： | IR2109 |
| 厂商： | International Rectifier |
| 文件页数： | 1/25页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HALF-BRIDGE 8-DIP |
| 标准包装： | 50 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 750ns |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
| 其它名称： | *IR2109 |
Data Sheet No. PD60163-U
IR2109(4) (S) & (PbF)
Features
? Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
? Gate drive supply range from 10 to 20V
? Undervoltage lockout for both channels
? 3.3V, 5V and 15V input logic compatible
? Cross-conduction prevention logic
? Matched propagation delay for both channels
? High side output in phase with IN input
? Logic and power ground +/- 5V offset.
? Internal 540ns dead-time, and programmable
up to 5us with one external R DT resistor (IR21094)
? Lower di/dt gate driver for better noise immunity
? Shut down input turns off both channels.
? Available in Lead-Free
Description
HALF-BRIDGE DRIVER
Product Summary
V OFFSET 600V max.
I O +/- 120 mA / 250 mA
V OUT 10 - 20V
t on/off (typ.) 750 & 200 ns
Dead Time 540 ns
(programmable up to 5uS for IR21094)
Packages
14 Lead SOIC
The IR2109(4)(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
low side referenced output channels. Proprietary HVIC
8 Lead SOIC
14 Lead PDIP
and latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output,
down to 3.3V logic. The output drivers feature a high
8 Lead PDIP
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
V CC
V CC
V B
IN
IN
HO
SD
SD
COM
V S
LO
TO
LOAD
up to 600V
IR21094
IR2109
V CC
V CC
HO
V B
(Refer to Lead Assignments for correct
IN
SD
IN
SD
DT
V S
TO
LOAD
configuration). This/These diagram(s) show
electrical connections only. Please refer to our
V SS
R DT
V SS
COM
LO
Application Notes and DesignTips for proper
circuit board layout.
www.irf.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR21091 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER |
| IR21091PBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 120mA 750ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR21091S | 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER |
| IR21091SPBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 120mA 750ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR21091STRPBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 120mA 750ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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