参数资料
型号: IR2151
厂商: International Rectifier
文件页数: 1/6页
文件大小: 0K
描述: IC DRVR HALF BRDG SELF-OSC 8-DIP
标准包装: 50
配置: 半桥
输入类型: 自振荡
电流 - 峰: 125mA
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-DIP
包装: 管件
其它名称: *IR2151
Preliminary Data Sheet No. PD60034- J
IR2151
(NOTE: For new designs, we
recommend IR’s new products IR2153 and IR21531)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
? Floating channel designed for bootstrap operation
Fully operational to +600V
Product Summary
V OFFSET
600V max.
?
?
Tolerant to negative transient voltage
dV/dt immune
Undervoltage lockout
Programmable oscillator frequency
Duty Cycle
I O +/-
50%
100 mA / 210 mA
f =
1
1.4 × (R T + 75 ? ) × C T
? Matched propagation delay for both channels
? Low side output in phase with R T
Description
The IR2151 is a high voltage, high speed, self-os-
cillating power MOSFET and IGBT driver with both
high and low side referenced output channels. Pro-
prietary HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. The front
end features a programmable oscillator which is simi-
lar to the 555 timer. The output drivers feature a high
V OUT
Deadtime (typ.)
Packages
10 - 20V
1.2 μs
pulse current buffer stage and an internal deadtime
designed for minimum driver cross-conduction. Propa-
gation delays for the two channels are matched to sim-
8 Lead PDIP
8 Lead SOIC
plify use in 50% duty cycle applications. The floating
channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration that
operates off a high voltage rail up to 600 volts.
Typical Connection
up to 600V
V CC
V B
R T
C T
COM
HO
V S
LO
TO
LOAD
(Refer to Lead Assignment diagram for correct pin configuration)
1
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