参数资料
型号: IR2152
厂商: International Rectifier
文件页数: 3/6页
文件大小: 0K
描述: IC DRVR HALF BRDG SELF-OSC 8-DIP
标准包装: 50
配置: 半桥
输入类型: 自振荡
电流 - 峰: 125mA
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-DIP
包装: 管件
IR2152
Dynamic Electrical Characteristics
V BIAS (V CC , V BS ) = 12V, C L = 1000 pF and T A = 25°C unless otherwise specified.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
t r
t f
DT
D
Turn-on rise time
Turn-off fall time
Deadtime
R T duty cycle
0.50
48
80
40
1.20
50
120
70
2.25
52
ns
μs
%
Static Electrical Characteristics
V BIAS (V CC , V BS ) = 12V, C L = 1000 pF, C T = 1 nF and T A = 25°C unless otherwise specified. The V IN , V TH and I IN
parameters are referenced to COM. The V O and I O parameters are referenced to COM and are applicable to the
respective output leads: HO or LO.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
f OSC
Oscillator frequency
19.4
94
20.0
100
20.6
106
kHz
R T = 35.7 k ?
R T = 7.04 k ?
V CLAMP
V CT+
V CT-
V CTUV
V RT+
V CC zener shunt clamp voltage
2/3 V CC threshold
1/3 V CC threshold
C T undervoltage lockout, V CC - C T
R T high level output voltage, V CC - R T
14.4
7.8
3.8
15.6
8.0
4.0
20
0
200
16.8
8.2
4.2
50
100
300
V
I CC = 5 mA
2.5V<V CC <V CCUV+
I RT = -100 μA
I RT = -1 mA
V RT-
R T low level output voltage
20
200
50
300
mV
I RT = 100 μA
I RT = 1 mA
V RTUV
V OH
V OL
I LK
I QBS
I QCC
I CT
V CCUV+
V CCUV-
R T undervoltage lockout
High level output voltage, V BIAS - V O
Low level output voltage, V O
Offset supply leakage current
Quiescent V BS supply current
Quiescent V CC supply current
C T input current
V CC supply undervoltage positive going
threshold
V CC supply undervoltage negative going
7.7
7.4
0
10
400
0.001
8.4
8.1
100
100
100
50
50
950
1.0
9.2
8.9
μA
V
2.5V<V CC <V CCUV+
I O = 0A
I O = 0A
V B = V S = 600V
threshold
V CCUVH
V CC supply undervoltage lockout hysteresis
200
500
mV
I O+
I O-
Output high short circuit pulsed current
Output low short circuit pulsed current
100
210
125
250
mA
V O = 0V
V O = 15V
www.irf.com
3
相关PDF资料
PDF描述
IR21531STRPBF IC DRIVER HALF BRIDGE OSC 8SOIC
IR2153DPBF IC DVR HALF BRDG SELF-OSC 8-DIP
IR2155 IC DRVR HALF BRDG SELF-OSC 8-DIP
IR2181STRPBF IC DRIVER HIGH/LOW SIDE 8SOIC
IR21834STRPBF IC DRIVER HALF BRIDGE 14SOIC
相关代理商/技术参数
参数描述
IR2152S 制造商:未知厂家 制造商全称:未知厂家 功能描述:Half Bridge Driver. LO Out of Phase with RT. Programmable Oscillating Frequency. 1.2us Deadtime in a 8-lead SOIC package
IR2153 功能描述:IC DRVR HALF BRDG SELF-OSC 8-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件
IR2153_09 制造商:IRF 制造商全称:International Rectifier 功能描述:SELF-OSCILLATING HALF-BRIDGE DRIVER
IR21531 功能描述:IC DRVR HALF BRDG SELF-OSC 8-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件
IR21531D 功能描述:IC DRVR HALF BRDG SELF-OSC 8-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大(自引导启动):600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP(0.300",7.62mm) 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127