参数资料
型号: IR21834STRPBF
厂商: International Rectifier
文件页数: 1/22页
文件大小: 0K
描述: IC DRIVER HALF BRIDGE 14SOIC
标准包装: 1
配置: 半桥
输入类型: 反相和非反相
延迟时间: 180ns
电流 - 峰: 1.9A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
供应商设备封装: 14-SOIC(窄型)
包装: 标准包装
产品目录页面: 1381 (CN2011-ZH PDF)
其它名称: IR21834SPBFDKR
Data Sheet No. PD60173 rev.H
IR2183 ( 4 )(S) & (PbF)
Features
? Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
HALF-BRIDGE DRIVER
Packages
14-Lead PDIP
?
?
?
?
?
?
?
?
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V and 5V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5V offset.
Lower di/dt gate driver for better noise immunity
Output source/sink current capability 1.4A/1.8A
Also available LEAD-FREE (PbF)
8-Lead PDIP
IR2183
8-Lead SOIC
IR2183S
IR21834
14-Lead SOIC
IR21834S
Description
The IR2183(4)(S) are high voltage,
high speed power MOSFET and IGBT
drivers with dependent high and low
side referenced output channels. Pro-
prietary HVIC and latch immune
IR2181/IR2183/IR2184 Feature Comparison
Cross-
Input conduction
Part Dead-Time Ground Pins Ton/Toff
logic prevention
logic
2181 COM
HIN/LIN no none 180/220 ns
21814 VSS/COM
CMOS technologies enable rugge-
dized monolithic construction. The
logic input is compatible with standard
2183 Internal 500ns COM
HIN/LIN yes
21834 Program 0.4 ~ 5 us VSS/COM
2184 Internal 500ns COM
IN/SD yes
21844 Program 0.4 ~ 5 us VSS/COM
180/220 ns
680/270 ns
CMOS or LSTTL output, down to 3.3V
logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration
which operates up to 600 volts.
Typical Connection
up to 600V
V CC
V CC
V B
HIN
HIN
HO
LIN
LIN
COM
V S
LO
TO
LOAD
IR2183
HO
IR21834
up to 600V
V CC
V CC
V B
(Refer to Lead Assignment for correct pin
HIN
LIN
HIN
LIN
DT
V S
TO
LOAD
configuration) This/These diagram(s) show
electrical connections only. Please refer to our
V SS
R DT
V SS
COM
LO
Application Notes and DesignTips for proper circuit
board layout.
www.irf.com
1
相关PDF资料
PDF描述
IR21844SPBF IC DRIVER HIGH/LOW SIDE 14SOIC
IR2213SPBF IC DRIVER HIGH/LOW SIDE 16SOIC
IR22141SSPBF IC DRIVER HALF BRIDGE SGL 24SSOP
IR2235JPBF IC DRIVER BRIDGE 3PHASE 44PLCC
IR2301PBF IC DRIVER HIGH/LOW SIDE 8DIP
相关代理商/技术参数
参数描述
IR2183PBF 功能描述:功率驱动器IC Hlf Brdg Drvr Soft Trn On 500ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IR2183S 功能描述:IC DRIVER HALFBRIDGE 600V 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大(自引导启动):600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP(0.300",7.62mm) 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127
IR2183SPBF 功能描述:功率驱动器IC HALF BRDG DRVR 600V 10 to 20V 1.4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IR2183STR 功能描述:IC DRIVER HALFBRIDGE 600V 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大(自引导启动):600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP(0.300",7.62mm) 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127
IR2183STRPBF 功能描述:功率驱动器IC Hlf Brdg Drvr Soft Trn On 500ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube