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| 型号： | IR21531PBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC DVR HALF BRDG SELF-OSC 8-DIP |
| 标准包装： | 50 |
| 配置： | 半桥 |
| 输入类型： | 自振荡 |
| 电流 - 峰： | 250mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
Preliminary Data Sheet No. PD60131 revM
IR21531(D)(S) & (PbF)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
? Integrated 600V half-bridge gate driver
? 15.6V zener clamp on Vcc
? True micropower start up
? Tighter initial deadtime control
? Low temperature coefficient deadtime
? Shutdown feature (1/6th Vcc) on C T pin
? Increased undervoltage lockout Hysteresis (1V)
? Lower power level-shifting circuit
? Constant LO, HO pulse widths at startup
? Lower di/dt gate driver for better noise immunity
? Low side output in phase with R T
? Internal 50nsec (typ.) bootstrap diode (IR21531D)
? Excellent latch immunity on all inputs and outputs
? ESD protection on all leads
? Also available LEAD-FREE
Description
The IR21531(D)(S) are an improved version of the
Product Summary
V OFFSET
Duty Cycle
Tr/Tp
V clamp
Deadtime (typ.)
Packages
8 Lead PDIP
600V max.
50%
80/40ns
15.6V
0.6 μ s
8 Lead SOIC
popular IR2155 and IR2151 gate driver ICs, and in-
corporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard
CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown
feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage
control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage
lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at
startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers,
and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to
maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
Typical Connections
IR21531(S)
600V
MAX
IR21531(D)
600V
MAX
VCC
VB
HO
VCC
VB
HO
Shutdown
www.irf.com
RT
CT
COM
VS
LO
Shutdown
RT
CT
COM
VS
LO
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR21531S | 功能描述:IC DRVR HALF BRDG SELF-OSC 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| IR21531SPbF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 15.6Vclamp 0.6 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR21531STR | 功能描述:IC DRVR HALF BRDG SELF-OSC 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| IR21531STRPBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 15.6Vclamp 0.6 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR21531STRPBF-CUT TAPE | 制造商:IR 功能描述:IR2153 Series 600 V 200 mA 15.6 V Supply Dual Half Bridge Driver - SOIC-8 |
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