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| 型号： | IR2153DPBF |
| 厂商： | International Rectifier |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IC DVR HALF BRDG SELF-OSC 8-DIP |
| 标准包装： | 50 |
| 配置： | 半桥 |
| 输入类型： | 自振荡 |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 15.6 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
IR2153(D)(S) & (PbF)
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.
Symbol
V B
V S
V HO
V LO
V RT
V CT
I CC
I RT
dV s /dt
Definition
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side output voltage
R T pin voltage
C T pin voltage
Supply current (note 1)
R T pin current
Allowable offset voltage slew rate
Min.
-0.3
V B - 25
V S - 0.3
-0.3
-0.3
-0.3
—
-5
-50
Max.
625
V B + 0.3
V B + 0.3
V CC + 0.3
V CC + 0.3
V CC + 0.3
25
5
50
Units
V
mA
V/ns
P D
Rth JA
T J
T S
T L
Maximum power dissipation @ T A ≤ +25°C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
(8 Lead DIP)
(8 Lead SOIC)
(8 Lead DIP)
(8 Lead SOIC)
—
—
—
—
-55
-55
—
1.0
0.625
125
200
150
150
300
W
°C/W
°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
V B s
V S
V CC
I CC
T J
Definition
High side floating supply voltage
Steady state high side floating supply offset voltage
Supply voltage
Supply current
Junction temperature
Min.
V CC - 0.7
-3.0 (note 2)
10
(note 3)
-40
Max.
V CLAMP
600
V CLAMP
5
125
Units
V
mA
°C
Note 1:
Note 2:
Note 3:
2
This IC contains a zener clamp structure between the chip V CC and COM which has a nominal breakdown
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the V CLAMP specified in the Electrical Characteristics section.
Care should be taken to avoid output switching conditions where the V S node flies inductively below ground by
more than 5V.
Enough current should be supplied to the V CC pin of the IC to keep the internal 15.6V zener diode clamping the
voltage at this pin.
www.irf.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR2153DS | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Half Bridge Driver. LO In Phase with RT. Programmable Oscillating Frequency. 1.2us Deadtime in a 8-lead SOIC package with bootstrap diode |
| IR2153PBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 15.6Vclamp 1.2 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2153S | 功能描述:IC DRVR HALF BRDG SELF-OSC 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| IR2153SPBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 15.6Vclamp 1.2 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2153STR | 功能描述:IC DRVR HALF BRDG SELF-OSC 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
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