参数资料
型号: IR2304SPBF
厂商: International Rectifier
文件页数: 3/8页
文件大小: 0K
描述: IC DRIVER HALF BRIDGE 8-SOIC
标准包装: 95
配置: 半桥
输入类型: 非反相
延迟时间: 220ns
电流 - 峰: 60mA
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 管件
IR2304(S)&(PbF)
Static Electrical Characteristics
V BIAS (V CC , V BS ) = 15V and T A = 25 ° C unless otherwise specified. The V IN , V TH and I IN parameters are referenced to
COM. The V O and I O parameters are referenced to COM and V S is applicable to HO and LO.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
V CCUV+
V CC and V BS supply undervoltage positive going
8
8.9
9.8
V BSUV+
threshold
V CCUV-
V BSUV-
V CCUVH
V CC and V BS supply undervoltage negative going
threshold
V CC supply undervoltage lockout hysteresis
7.4
0.3
8.2
0.7
9
V
V BSUVH
I LK
Offset supply leakage current
50
V B = V S = 600V
I QBS
I QCC
V IH
V IL
V OH
V OL
I IN+
I IN-
I O+
I O-
Quiescent V BS supply current
Quiescent V CC supply current
Logic “1” input voltage
Logic “0” input voltage
High level output voltage, V BIAS - V O
Low level output voltage, V O
Logic “1” input bias current
Logic “0” input bias current
Output high short circuit pulse current
Output low short circuit pulsed current
20
50
2.3
60
130
60
120
5
1.0
150
240
0.8
2.8
1.2
40
2.0
μ A
V
μ A
mA
V IN = 0V or 5V
V IN = 0V or 5V
I O = 20mA
V IN = 5V
V IN = 0V
V O = 0V
PW ≤ 10 μ s
Dynamic Electrical Characteristics
V BIAS (V CC , V BS ) = 15V, V S = COM, C L = 1000 pF and T A = 25 ° C unless otherwise specified.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
ton
toff
tr
tf
DT
MT
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Dead time
Delay matching, HS & LS turn-on/off
120
130
60
20
80
220
220
200
100
100
320
330
300
170
190
50
ns
V S = 0V
V S = 0V or 600V
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