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| 型号： | IR3103 |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | PWR MOD 180W GATE DRIVER 11-SIP |
| 标准包装： | 20 |
| 系列： | iMOTION™ |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 300ns |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 500V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 11-SIP（9 引线） |
| 供应商设备封装： | 11-SIP |
| 包装： | 管件 |
| 产品目录页面： | 1381 (CN2011-ZH PDF) |
| 配用： | IRADK31-ND - DESIGN KIT 1/4 HP DC FOR IR31XX |
PD-96992 Rev.B
Half-Bridge FredFET
and Integrated Driver
Description
IR3103
Series
0.75A, 500V
The IR3103 is a gate driver IC integrated with a half bridge FredFET designed for motor drive applications
up to 180W (heatsink-less). The sleek and compact single-in-line package is optimized for electronic motor
control in appliance applications such as fans and compressors for refrigerators. The IR3103 offers an
extremely compact, high performance half-bridge inverter in a single isolated package for two-phase and
three-phase motor drivers.
Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET ? power FredFET
technology (HEXFET ? MOSFET with ultra-fast recovery body diode characteristics), enable efficient and
rugged single package construction. Propagation delays for the high and low side power FredFETs are
matched thanks to advanced IC technology.
Features
? Output Power FredFET in Half-Bridge Configuration
? High Side Gate Drive Designed for Bootstrap Operation
? Bootstrap Diode Integrated into Package
? Lower Power Level-Shifting Circuit
? Lower di/dt Gate Drive for Better Noise Immunity
? Excellent Latch Immunity on All Inputs and Outputs
? ESD Protection on All Leads
? Isolation 1500 V RMS min.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. Power dissipation is measured under board mounted and still air
conditions.
Parameter
V DS
V DD
I O (T A =25°C)
I O (T A =55°C)
I O (T A =25°C)
P d
V ISO
T J
T S
T L
T S
Description
Drain to Source Blocking Voltage
DC Bus Supply Voltage (No Switching Operation)
Continuous Output Current (1)
Continuous Output Current (1)
Pulsed Output Current (2)
Package Power Dissipation @T A ≤ 55°C (3)
Isolation Voltage (1min)
Junction Temperature (Power MOSFET)
Storage Temperature
Lead Temperature (soldering, 10 seconds)
Storage Temperature
Max. Value
500
500
0.7
0.6
2.7
1.4
1500
-40 to +150
-40 to +150
300
-40 to +150
Units
V
V
A
A
A
W
V RMS
°C
°C
°C
°C
Note 1: See figure 3, f PWM =16kHz
Note 2: T P =100ms, other conditions as per Figure 3, f PWM =16kHz
Note 3: Single Device Operating
www.irf.com
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