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| 型号： | IR3103 |
| 厂商： | International Rectifier |
| 文件页数： | 3/11页 |
| 文件大小： | 0K |
| 描述： | PWR MOD 180W GATE DRIVER 11-SIP |
| 标准包装： | 20 |
| 系列： | iMOTION™ |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 300ns |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 500V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 11-SIP（9 引线） |
| 供应商设备封装： | 11-SIP |
| 包装： | 管件 |
| 产品目录页面： | 1381 (CN2011-ZH PDF) |
| 配用： | IRADK31-ND - DESIGN KIT 1/4 HP DC FOR IR31XX |
IR3103
Half Bridge Electrical Characteristics @T J = 25°C
V CC =V BO =15V and T J =25°C unless otherwise specified. V DD and V IN parameters referenced to COM
Symbol
Parameter
Min
Typ
Max
Units Conditions
V (BR)DSS
I HS-LK
I LS-LK
R DS(ON)
V SD
R DS(ON)
V SD
V BDFM
E ON
E OFF
E TOT
E REC
t RR
E ON
E OFF
E TOT
E REC
t RR
Q G
C OSS
C OSS eff.
SCSOA
I SC
Drain-to-Source Breakdown
Voltage
Low Side Leakage Current
Low Side Leakage Current
Drain-to-Source ON Resistance
Diode Forward Voltage
Drain-to-Source ON Resistance
Diode Forward Voltage
Bootstrap Diode Forward
Voltage Drop
Turn-On Energy Losses
Turn-Off Energy Losses
Total Energy Losses
Body-Diode Reverse Recovery
Losses
Reverse Recovery Time
Turn-On Energy Losses
Turn-Off Energy Losses
Total Energy Losses
Body-Diode Reverse Recovery
Losses
Reverse Recovery Time
Turn-ON MOSFET Gate Charge
Output Capacitance
Effective Output Capacitance
Short Circuit Safe Operating
Area
Short Circuit Drain Current
500
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---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
10
---
---
5
80
5
100
1.9
0.8
4.6
0.6
---
---
55
4
59
2
70
85
5
90
6
90
15
12
30
---
18.5
---
50
105
2.5
0.9
6.5
0.75
1.25
1.10
75
10
85
5
---
115
11
126
11
---
21
---
---
---
---
V
μA
μA
?
V
?
V
V
μJ
μJ
μJ
μJ
ns
μJ
μJ
μJ
μJ
ns
nC
pF
pF
μs
A
V IN =0V, I DD /I O =250μA
V DS =500V, V IN =0V
V DS =500V, V IN =0V, T J =150°C
V DS =500V, V IN =0V
V DS =500V, V IN =0V, T J =150°C
I O = 0.75A, V IN =5V
I O = 0.75A, V IN =0V
I O = 0.75A, V IN =5V, T J =150°C
I O = 0.75A, V IN =0V, T J =150°C
I F =1A
I F =1A, T J =125°C
I DD /I O = 0.75A, V DD =300V,
V BO /V CC =15V, L= 6.3mH
Energy Losses include Body-Diode
Reverse Recovery
I DD /I O = 0.75A, V DD =300V,
V BO /V CC =15V, L=6.3mH
T J =150°C
Energy Losses include Body-Diode
Reverse Recovery
V DD =250V, I O =3.2A. Note 5
V DD =400V, f=1MHz. Note 5
V DD =0V to 400V. Note 5,6
T J =150°C, V P =450V,
V + = 320V,V CC =+15V
T J =150°C, V P =450V, t SC <10μs
V + = 320V, V GE =15V, V CC =+15V
Note 5: Characterized on FREDFET die level, not measured at EOL
Note 6: C OSS eff. is a fixed capacitance that gives same charging time as C OSS while V DS is rising from 0 to 80% V DSS .
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