参数资料
型号: IR2520DSTRPBF
厂商: International Rectifier
文件页数: 8/17页
文件大小: 0K
描述: IC BALLAST CTLR 600V IC 8-SOIC
标准包装: 2,500
类型: 镇流器控制器
频率: 34 ~ 86 kHz
电流 - 电源: 10mA
电流 - 输出: 230mA
电源电压: 12.6 V ~ 15.4 V
工作温度: -25°C ~ 125°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
IR2520D(S)& (PbF)
VVCO
6V
4.8V
0.85V
Run Mode
The IR2520D enters RUN mode when the voltage on pin
VCO exceeds 4.8V (V VCO_RUN ). The lamp has ignited and
the ballast output stage becomes a low-Q, series-L, paral-
lel-RC circuit. Also, the VS sensing and fault logic blocks
(Figure 5) both become enabled for protection against non-
ZVS and over-current fault conditions. The voltage on the
VCO pin continues to increase and the frequency deceases
Freq
fmax
Frequency Sweep Mode
Run Mode
further until the VCO pin voltage limits at 6V (V VCO_MAX )
and the minimum frequency is reached. The resonant in-
ductor, resonant capacitor, DC bus voltage and minimum
frequency determine the running lamp power. The IC stays
at this minimum frequency unless non-ZVS occurs at the
VS pin, a crest factor over-current condition is detected at
the VS pin, or VCC decreases below the UVLO- threshold
(see State Diagram).
fmin
Fig. 3 IR2520D Frequency sweep mode timing
diagram.
DCBUS(+)
RSUPPLY
DCP2
MHS
CVCC
RFMIN
VCC
COM
FMIN
VCO
1
2
3
Bootstrap
FET
Driver
15.6V
CLAMP
VCO
High-
and
Low-
side
Driver
8
7
6
VB
HO
VS
LO
CBS
CSNUB
TO LOAD
4
5
Vout
Vin
High -Q
Ignition
DCBUS(-)
CVCO
Fault
Logic
VS
Sense
MLS
DCP1
LOAD RETURN
Fig. 5 IR2520D Run mode circuitry.
Low -Q
Run
Start
Non Zero-Voltage Switching (ZVS) Protection
During run mode, if the voltage at the VS pin has not slewed
entirely to COM during the dead-time such that there is
fmin
fmax
Frequency
voltage between the drain and source of the external low-
side half-bridge MOSFET when LO turns-on, then the system
Fig. 4 Resonant tank Bode plot with lamp operating
points.
8
is operating too close to, or, on the capacitive side of,
resonance. The result is non-ZVS capacitive-mode
switching that causes high peak currents to flow in the
half-bridge MOSFETs that can damage or destroy them
(Figure 6). This can occur due to a lamp filament failure(s),
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