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参数资料
| 型号： | IR255SG08HCB |
| 元件分类： | 晶闸管 |
| 英文描述： | 800 V, SCR |
| 封装： | 4 INCH, WAFER |
| 文件页数： | 1/3页 |
| 文件大小： | 126K |
| 代理商： | IR255SG08HCB |
1
www.irf.com
Junction Size:
Square 250 mils
Wafer Size:
4"
V
RRM Class:
600 to 1200 V
Passivation Process:
Glassivated MESA
Reference IR Packaged Part:
n. a.
PHASE CONTROL THYRISTORS
IR255SG..HCB
Major Ratings and Characteristics
Parameters
Units
Test Conditions
V
TM
Maximum On-state Voltage
1.25V
T
J = 25°C, IT = 25 A
V
DRM/VRRM Direct and Reverse Breakdown Voltage
600 to 1200 V T
J = 25°C, IDRM/IRRM = 100 A
(1)
I
GT
Max. Required DC Gate Current to Trigger
80mA
T
J = 25° C, anode supply = 6 V, resistive load
V
GT
Max. Required DC Gate Voltage to Trigger
2 V
T
J = 25° C, anode supply = 6 V, resistive load
I
H
Holding Current Range
5 to 100 mA Anode supply = 6 V, resistive load
I
L
Maximum Latching Current
300mA
Anode supply = 6 V, resistive load
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Chip Dimensions
250x250mils(seedrawing)
WaferDiameter
100 mm, with std. <110> flat
Wafer Thickness
330 m ± 10 m
Maximum Width of Sawing Line
130m
Reject Ink Dot Size
0.25mmdiameterminimum
Ink Dot Location
Seedrawing
Recommended Storage Environment
Storage in original container, in dessicated
nitrogen, with no contamination
Preliminary Data Sheet I0211J 12/99
(1) Nitrogen flow on die edge.
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