参数资料
| 型号： | IR3086MPBF |
| 厂商： | International Rectifier |
| 文件页数： | 15/34页 |
| 文件大小： | 0K |
| 描述： | IC CONTROLLER PHASE 20MLPQ |
| 标准包装： | 5 |
| 系列： | XPhase™ |
| 应用： | 处理器 |
| 电流 - 电源： | 10mA |
| 电源电压： | 8.4 V ~ 14 V |
| 工作温度： | 0°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-MLPQ |
| 供应商设备封装： | 20-MLPQ（4x4） |
| 包装： | 剪切带 (CT) |
| 其它名称： | *IR3086MPBF |
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IR3086
SR UP is proportional to that of VDAC down-slope and is given by Equation (9), where I SOURCE is the source current
of VDAC pin as shown in Figure15 of IR3081 Data Sheet.
C VDAC =
I SINK
SR DOWN
(7)
R VDAC = 0 . 5 +
3 . 2 ? 10 ? 15
C VDAC 2
(8)
SR UP =
I SOURCE
C VDAC
(9)
Over Current Setting Resistor R OCSET
The inductor DC resistance is utilized to sense the inductor current. The copper wire of inductor has a constant
temperature coefficient of 3850 ppm/°C, and therefore the maximum inductor DCR can be calculated from Equation
(10), where R L_MAX and R L_ROOM are the inductor DCR at maximum temperature T L_MAX and room temperature
T_ ROOM respectively.
R L _ MAX = R L _ ROOM ? [ 1 + 3850 * 10 ? 6 ? ( T L _ MAX ? T ROOM )]
(10)
The current sense amplifier gain of IR3086 decreases with temperature at the rate of 1470 ppm/°C, which
compensates part of the inductor DCR increase. The phase IC die temperature is only a couple of degrees Celsius
higher than the PCB temperature due to the low thermal impedance of MLPQ package. The minimum current sense
amplifier gain at the maximum phase IC temperature T IC_MAX is calculated from Equation (11).
G CS _ MIN = G CS _ ROOM ? [ 1 ? 1470 * 10 ? 6 ? ( T IC _ MAX ? T ROOM )]
(11)
The total input offset voltage (V CS_TOFST ) of current sense amplifier in phase ICs is the sum of input offset
(V CS_OFST) of the amplifier itself and that created by the amplifier input bias currents flowing through the current
sense resistors R CS+ and R CS- .
V CS _ TOFST = V CS _ OFST + I CSIN + ? R CS + ? I CSIN ? ? R CS ?
(12)
The over current limit is set by the external resistor R OCSET as defined in Equation (13), where I LIMIT is the required
over current limit. I OCSET, the bias current of OCSET pin, changes with switching frequency setting resistor R OSC
and is determined by the curve in Figure 14 of IR3081 Data Sheet. K P is the ratio of inductor peak current over
average current in each phase and is calculated from Equation (14).
R OCSET = [
I LIMIT
n
? R L _ MAX ? ( 1 + K P ) + V CS _ TOFST ] ? G CS _ MIN / I OCSET
(13)
K P =
( V I ? V O ) ? V O /( L ? V I ? f SW ? 2)
I O / n
(14)
No Load Output Voltage Setting Resistor R FB and Adaptive Voltage Positioning Resistor R DRP
A resistor between FB pin and the converter output is used to create output voltage offset V O_NLOFST, which is the
difference between V DAC voltage and output voltage at no load condition. Adaptive voltage positioning further
lowers the converter voltage by R O *I O, where R O is the required output impedance of the converter.
R FB is not only determined by I FB , the current flowing out of FB pin as shown in Figure 14 of IR3081 Data Sheet, but
also affected by the adaptive voltage positioning resistor R DRP and total input offset voltage of current sense
amplifiers. R FB and R DRP are determined by (15) and (16) respectively.
Page 15 of 34
9/30 /04
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