参数资料
型号: IR3220STR
厂商: International Rectifier
文件页数: 7/15页
文件大小: 0K
描述: IC H-BRIDGE 45V 6A 20SOIC
标准包装: 1,000
类型: 半桥
输入类型: 非反相
输出数: 4
导通状态电阻: 11 毫欧
电流 - 输出 / 通道: 2A
电流 - 峰值输出: 15A
电源电压: 8 V ~ 28 V
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: 20-SOIC(0.295",7.50mm 宽)
供应商设备封装: 20-SOIC(宽型)
包装: 带卷 (TR)
IR3220S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are referenced to Gnd lead. (TAmbient = 25 o C unless otherwise specified). Symbols with (2) refer to M2 output.
Symbol
Parameter
Min.
Max.
Units
Vm1 (2)
Maximum M1 (M2) voltage (active clamp)
Vcc-37 Vcc+0.3
Vin1 (2)
Maximum IN 1 (IN 2) voltage
-0.3 5.5
V
Vcc/gnd
Maximum Vcc pin to GND pin voltage
-0.3
45
I in1 (2)
Vg1 (2)
Vss
Vrc
Irc
Vdg
Idg
Isd cont.
Isd pulsed
ESD 1
ESD 2
PD
TJ max.
TL
Vcc/gnd max.
Ig1 (2) max.
Ig1 (2) avg.
Maximum IN1 (IN 2) current
Maximum Gate 1 ( Gate 2 ) voltage
Maximum SS voltage
Maximum Vrc voltage
Maximum output current of the Vrc pin
Maximum diagnostic output voltage
Maximum diagnostic output current
Diode max. permanent current (Rth=80°C/W) (1)
(Rth=60°C/W) (1)
Diode max. pulsed current (1)
Electrostatic discharge ( human body model C=100pF, R=1500 ? )
Electrostatic discharge ( machine model C=200pF, R=0 ?, L=10 μ H)
Maximum power dissipation ( Rth = 80°C/W )
Max. storage & operating junction temperature
Lead temperature ( soldering 10 seconds )
Maximum Vcc to GND voltage (0.4 s - single pulse)
Maximum transient gate current (Ton < 5 μ S)
Maximum average gate current
-1
-0.3
-0.3
-0.3
-0.3
-1
-40
10
7.5
5.5
5.5
1
5.5
10
2.0
3.0
15
4
0.5
1.5
+150
300
60
100
10
mA
V
mA
V
mA
A
kV
W
°C
V
mA
(1) Limited by junction temperature.
Thermal Characteristics
Symbol
Rth 1
Rth 2
Parameter
Junction to ambient thermal resistance (std footprint)
Junction to ambient thermal resistance (1" sq. footprint)
Typ.
80
60
Max.
Units
°C/W
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