参数资料
型号: IR3505ZMTRPBF
厂商: International Rectifier
文件页数: 3/20页
文件大小: 0K
描述: IC XPHASE3 CTLR 2.5A 16-MLPQ
标准包装: 1
系列: XPhase3™
应用: 处理器
电流 - 电源: 3mA
电源电压: 8 V ~ 16 V
工作温度: 0°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 16-MLPQ
供应商设备封装: 16-MLPQ(3x3)
包装: 标准包装
其它名称: IR3505ZMTRPBFDKR
IR3505Z
RECOMMENDED OPERATING CONDITIONS FOR RELIABLE OPERATION WITH MARGIN
8.0V ≤ V CC ≤ 16V, 4.75V ≤ V CCL ≤ 7.5V, 0.5V ≤ V(DACIN) ≤ 1.6V, 250kHz ≤ CLKIN ≤ 9MHz, 250kHz ≤ PHSIN
≤ 1.5MHz, 0 o C ≤ T J ≤ 125 o C
ELECTRICAL CHARACTERISTICS
The electrical characteristics involve the spread of values guaranteed within the recommended operating conditions.
Typical values represent the median values, which are related to 25°C. C GATEH = 3.3nF, C GATEL = 6.8nF (unless
otherwise specified).
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
Gate Drivers
GATEH Source Resistance
GATEH Sink Resistance
GATEL Source Resistance
GATEL Sink Resistance
GATEH Source Current
GATEH Sink Current
GATEL Source Current
GATEL Sink Current
GATEH Rise Time
BOOST – SW = 7V. Note 1
BOOST – SW = 7V. Note 1
VCCL – PGND = 7V. Note 1
VCCL – PGND = 7V. Note 1
BOOST=7V, GATEH=2.5V, SW=0V.
BOOST=7V, GATEH=2.5V, SW=0V.
VCCL=7V, GATEL=2.5V, PGND=0V.
VCCL=7V, GATEL=2.5V, PGND=0V.
BOOST – SW = 7V, measure 1V to 4V
1.0
1.0
1.0
0.4
2.0
2.0
2.0
4.0
5
2.5
2.5
2.5
1.0
10
?
?
?
?
A
A
A
A
ns
transition time
GATEH Fall Time
BOOST - SW = 7V, measure 4V to 1V
5
10
ns
transition time
GATEL Rise Time
VCCL – PGND = 7V, Measure 1V to 4V
10
20
ns
transition time
GATEL Fall Time
VCCL – PGND = 7V, Measure 4V to 1V
5
10
ns
transition time
GATEL low to GATEH high
BOOST = VCCL = 7V, SW = PGND = 0V,
10
20
40
ns
delay
measure time from GATEL falling to 1V to
GATEH rising to 1V
GATEH low to GATEL high
BOOST = VCCL = 7V, SW = PGND = 0V,
10
20
40
ns
delay
measure time from GATEH falling to 1V to
GATEL rising to 1V
Disable Pull-Down
Note 1
30
80
130
k ?
Resistance
Clock
CLKIN Threshold
CLKIN Bias Current
CLKIN Phase Delay
Compare to V(VCCL)
CLKIN = V(VCCL)
Measure time from CLKIN<1V to
40
-0.5
40
45
0.0
75
57
0.5
125
%
μ A
ns
GATEH>1V
PHSIN Threshold
PHSOUT Propagation
Delay
PHSIN Pull-Down
Compare to V(VCCL)
Measure time from CLKIN > (VCCL * 50% )
to PHSOUT > (VCCL *50%). 10pF @125 o C
35
4
30
50
15
100
55
35
170
%
ns
k ?
Resistance
PHSOUT High Voltage
I(PHSOUT) = -10mA, measure VCCL –
1
0.6
V
PHSOUT
PHSOUT Low Voltage
I(PHSOUT) = 10mA
0.4
1
V
Page 3 of 20
March 17, 2009
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