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参数资料
| 型号： | IR3506MTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 16/21页 |
| 文件大小： | 0K |
| 描述： | IC CTRL XPHASE3 DDR 16-MLPQ |
| 标准包装： | 3,000 |
| 系列： | XPhase3™ |
| 应用： | 处理器 |
| 电流 - 电源： | 10mA |
| 电源电压： | 4.75 V ~ 7.5 V |
| 工作温度： | 0°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-MLPQ |
| 供应商设备封装： | 16-MLPQ（3x3） |
| 包装： | 带卷 (TR) |
IR3506
LAYOUT GUIDELINES
The following layout guidelines are recommended to reduce the parasitic inductance and resistance of the
PCB layout, therefore minimizing the noise coupled to the IC.
? Dedicate at least one middle layer for a ground plane, which is then split into signal ground plane (LGND)
and power ground plane (PGND).
? Separate analog bus (EAIN, DACIN, and IOUT) from digital bus (CLKIN, PHSIN, and PHSOUT) to reduce
the noise coupling.
? Connect PGND to LGND pins to their respective ground planes through vias.
? Place current sense resistors and capacitors (R CS and C CS ) close to phase IC. Use Kelvin connection for
the inductor current sense wires, but separate the two wires by ground polygon. The wire from the inductor
terminal to CSIN- should not cross over the fast transition nodes, i.e. switching nodes, gate drive outputs
and bootstrap nodes.
? Place the decoupling capacitor C VCCL as close as possible to the VCCL pin.
? Place the phase IC as close as possible to the MOSFETs to reduce the parasitic resistance and
inductance of the gate drive paths.
? Place the input ceramic capacitors close to the drain of top MOSFET and the source of bottom MOSFET.
Use combination of different packages of ceramic capacitors.
? There are two switching power loops. One loop includes the input capacitors, top MOSFET, inductor,
output capacitors and the load; another loop consists of bottom MOSFET, inductor, output capacitors and
the load. Route the switching power paths using wide and short traces or polygons; use multiple vias for
connections between layers.
To Gate
Drive
Voltage
To Digital Bus
To Analog Bus
To VIN
LGND
PLANE
R
To VIN
LGND
PHSOUT
PHSIN
ISHARE
DACIN
EAIN
CLKIN
PGND
GATEL
VCCL
SW
BOOST GATEH
CSIN-
CSIN+
VCC
VCC
C
CS
VCCL
C
C
CS
BST
D
To Bottom
MOSFET
C
BST
To Top
MOSFET
To LGND
Plane
Ground
PGND
Polygon
PLANE
Page 16 of 21
To Switching
Node
To Inductor
V3.02
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR3507 | 制造商:IRF 制造商全称:International Rectifier 功能描述:XPHASE3TM PHASE IC |
| IR3507MPBF | 制造商:International Rectifier 功能描述: |
| IR3507MTRPBF | 功能描述:开关变换器、稳压器与控制器 XPHASE3 DDR VTT 7V 2A 3 Wire RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| IR3507PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:XPHASE3TM PHASE IC |
| IR3507Z | 制造商:IRF 制造商全称:International Rectifier 功能描述:XPHASE3TM PHASE IC |
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