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参数资料
| 型号： | IR3629AMTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 13/23页 |
| 文件大小： | 0K |
| 描述： | IC CTLR PWM SYNC BUCK 12-MLPD |
| 产品变化通告： | (EP) Parts Discontinuation 25/May/2012 |
| 标准包装： | 1 |
| 应用： | 控制器，DDR |
| 输入电压： | 4.5 V ~ 14 V |
| 输出数： | 1 |
| 输出电压： | 可调至 0.6V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 12-VFDFN 裸露焊盘 |
| 供应商设备封装： | 12-MLPD |
| 包装： | 标准包装 |
| 产品目录页面： | 1383 (CN2011-ZH PDF) |
| 其它名称： | IR3629AMTRPBFDKR |
IR3629/IR3629A MPbF
Power MOSFET Selection
The IR3629A uses two N-Channel MOSFETs per
channel. The selection criteria to meet power
transfer requirements are based on maximum
drain-source voltage (V DSS ), gate-source drive
voltage (V gs ), maximum output current, On-
resistance R DS(on) , and thermal management.
switching losses in a synchronous Buck
converter. The synchronous MOSFET turns on
under zero voltage conditions, therefore, the turn
on losses for synchronous MOSFET can be
neglected. With a linear approximation, the total
switching loss can be expressed as:
V ds ( off ) t r + t f
The MOSFET must have a maximum operating
voltage (V DSS ) exceeding the maximum input
voltage (V in ).
Where:
P sw =
*
2 T
* I load - - - (10)
P cond = (upper switch) = I load ? R ds(on) ? D ? ?
P cond = (lower switch) = I load ? R ds(on) ? (1 ? D) ? ?
The gate drive requirement is almost the same
for both MOSFETs. A logic-level transistor can
be used and caution should be taken with
devices at very low gate threshold voltage (V gs )
to prevent undesired turn-on of the
complementary MOSFET, which results in a
shoot-through current.
The total power dissipation for MOSFETs
includes conduction and switching losses. For
the Buck converter the average inductor current
is equal to the DC load current. The conduction
loss is defined as:
2
2
? = R ds(on) temperatu re dependency
V ds(off) = Drain to source voltage at the off time
t r = Rise time
t f = Fall time
T = Switching period
I load = Load current
The switching time waveforms is shown in
figure12.
V DS
90%
10%
The R DS(on) temperature dependency should be
considered for the worst case operation. This is
V GS
t d (ON)
t r
t d (OFF)
t f
typically given in the MOSFET datasheet. Ensure
that the conduction losses and switching losses
do not exceed the package ratings or violate the
overall thermal budget.
For this design, the IRF6712 is selected for
control FET and IRF6715 is selected for the
synchronous FET. These devices provide low on
resistance in a DirectFET package.
The MOSFETs have the following data:
Fig. 12: switching time waveforms
From IRF6712 data sheet:
tr = 11ns
tf = 19ns
These values are taken under a certain test
condition. For more details please refer to the
IRF6712 data sheet.
By using equation (10), we can calculate the
ControlFET (IRF6712) :
V ds = 25 V,Q g = 12 nC
R ds(on) = 3 . 8 m ? @ V gs = 10 V
SyncFET (IRF6715) :
V ds = 25 V,Q g = 40 nC
R ds(on) = 1 . 3 m ? @ V gs = 10 V
switching losses. P sw =1.35W at Io=25A.
The reverse recovery loss is also another
contributing factor in control FET switching
losses. This is equivalent to extra current
The conduction losses will be: P con =1.05W at
Io=25A. The switching loss is more difficult to
calculate, even though the switching transition is
well understood. The reason is the effect of the
parasitic components and switching times during
the switching procedures such as turn-on / turn-
off delays and rise and fall times. The control
MOSFET contributes to the majority of the
11/29/2007
required to remove the minority charges from the
synchronous FET. The reverse recovery loss can
be expressed as:
P Qrr = Q rr *t rr *F s
Q rr : Re verse Re cov ery Ch arg e
t rr : Re verse Re cov ery Time
F s : Switchin g Frequen cy
13
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相关代理商/技术参数 |
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| IR3629MPBF | 功能描述:IC CTLR PWM BUCK SYNC 12-MLPD RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
| IR3629MTRPBF | 功能描述:电压模式 PWM 控制器 HI FREQ SYNC PWM 600kHz 5 or 12V 0.6 RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| IR3637ASPBF | 功能描述:IC REG CTRLR BUCK PWM VM 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,000 系列:- PWM 型:电压模式 输出数:1 频率 - 最大:1.5MHz 占空比:66.7% 电源电压:4.75 V ~ 5.25 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 85°C 封装/外壳:40-VFQFN 裸露焊盘 包装:带卷 (TR) |
| IR3637ASTRPBF | 功能描述:开关变换器、稳压器与控制器 High Volt Sych PWM 600kHz 5V PWM RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| IR3637SPBF | 功能描述:IC REG CTRLR BUCK PWM VM 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,000 系列:- PWM 型:电压模式 输出数:1 频率 - 最大:1.5MHz 占空比:66.7% 电源电压:4.75 V ~ 5.25 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 85°C 封装/外壳:40-VFQFN 裸露焊盘 包装:带卷 (TR) |
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