参数资料
型号: IR3640MTRPBF
厂商: International Rectifier
文件页数: 17/32页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM VM 20-MLPQ
标准包装: 3,000
PWM 型: 电压模式
输出数: 1
频率 - 最大: 1.65MHz
占空比: 92%
电源电压: 4.5 V ~ 5.5 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 125°C
封装/外壳: 20-VFQFN 裸露焊盘
包装: 带卷 (TR)
IR3640MPBF
V in ? V o = L ?
; Δ t = D ?
L = ( V in ? V o ) ?
Δ i
Δ t
V o
V in ? Δ i * F s
1
F s
- -(14)
Since the output capacitor has a major role in the
overall performance of the converter and
determines the result of transient response,
selection of the capacitor is critical. The IR3840
Δ V o ( ESL ) = ? in ? * ESL
Where:
V in = Maximum input voltage
V o = Output Voltage
Δ i = Inductor ripple current
F s = Switching frequency
Δ t = Turn on time
D = Duty cycle
If Δ i ≈ 35 %( I o ) , then the output inductor is
calculated to be 0.29uH. Select L=0.33uH
The MPL104-R33 from Delta provides a
compact, low profile inductor suitable for this
application.
Output Capacitor Selection
The voltage ripple and transient requirements
determine the output capacitors type and values.
The criteria is normally based on the value of the
Effective Series Resistance (ESR). However the
actual capacitance value and the Equivalent
Series Inductance (ESL) are other contributing
components. These components can be
described as:
Δ V o = Δ V o ( ESR ) + Δ V o ( ESL ) + Δ V o ( C )
Δ V o ( ESR ) = Δ I L * ESR
? V ?
? L ?
can perform well with all types of capacitors.
As a rule, the capacitor must have low enough
ESR to meet output ripple and load transient
requirements.
The goal for this design is to meet the voltage
ripple requirement in the smallest possible
capacitor size. Therefore it is advisable to select
ceramic capacitors due to their low ESR and ESL
and small size. Ten of the Murata
GRM21BR60G476ME15L (47uF/4V) capacitors
is a good choice.
Power MOSFET Selection
The IR3640 uses two N-Channel MOSFETs per
channel. The selection criteria to meet power
transfer requirements are based on maximum
drain-source voltage (V DSS ), gate-source drive
voltage (V gs ), maximum output current, On-
resistance R DS(on) , and thermal management.
The MOSFET must have a maximum operating
voltage (V DSS ) exceeding the maximum input
voltage (V in ).
The gate drive requirement is almost the same
for both MOSFETs. A logic-level transistor can
be used and caution should be taken with
devices at very low gate threshold voltage (V gs )
to prevent undesired turn-on of the
complementary MOSFET, which results in a
shoot-through current.
The total power dissipation for MOSFETs
includes conduction and switching losses. For
Δ V o ( C ) =
Δ I L
8 * C o * F s
the Buck converter the average inductor current
is equal to the DC load current. The conduction
loss is defined as:
P cond (upper switch) = I load ? R ds(on) ? D ? ?
P cond (lower switch) = I load ? R ds(on) ? (1 ? D) ? ?
06/15/2009
Δ V o = Output vo ltage ripple
Δ I L = Inductor ripple current
2
2
? = R ds(on) temperat ure dependency
17
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