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| 型号： | IR5001S |
| 厂商： | International Rectifier |
| 英文描述： | UNIVERSAL ACTIVE ORING CONTROLLER |
| 中文描述： | 通用有源ORing控制器 |
| 文件页数： | 10/13页 |
| 文件大小： | 226K |
| 代理商： | IR5001S |
10
IR5001
www.irf.com
APPLICATION INFORMATION
The IR5001 is designed for multiple active ORing
and reverse polarity protection applications with
minimal number of external components. Examples
of typical circuit connections are shown below.
Negative Rail ORing/Reverse Polarity Protection
A typical connection of the IR5001 in negative
rail Active ORing or reverse polarity protection is
shown in Fig. 17. In this example, IR5001 is biased
directly from the positive rail. However, any of the
biasing schemes shown in Fig. 16 can be used.
For input ORing in carrier-class communications
boards, one IR5001 is used per feed. This is shown
in Fig.1. An evaluation kit is available for typical
system boards, with input voltages of negative 36V
to negative 75V, and for power levels from 30W to
about 300W. The p/n for the evaluation kit is
IRDC5001-LS48V.
This evaluation kit contains
detailed
design
considerations
performance data for the IR5001.
and
in-circuit
Positive Rail ORing / Ground ORing in
Communications Boards
An example of a typical connection in positive
rail ORing is shown in Fig. 18. Typical applications
are inside redundant AC-DC and DC-DC power
supplies, or on-board ORing. For positive rail ORing,
an additional Vbias voltage above the positive rail is
needed to bias the IR5001.
An evaluation kit for high-current 12V positive
rail ORing is available under p/n
IRAC5001-
HS100A,
demonstrating performance of the IR5001
at 100A output current.
Considerations for the Selection of the Active
ORing N-Channel MOSFET
Active ORing FET losses are all conduction
losses, and depend on the source-drain current and
R
DS(on)
of the FET. The conduction loss could be
virtually eliminated if a FET with very low R
DS(on)
was used. However, using arbitrarily low R
DS(on)
is
not desirable for three reasons:
1. Turn off propagation delay. Higher R
DS(on)
will
provide more voltage information to the internal
comparator faster, and will result in faster FET
turn off protection in case of short-circuit of the
source (less voltage disturbance on the
redundant bus.
2. Undetected reverse (drain to source) current
flow. With the asymmetrical offset voltage, some
small current can flow from the drain to source
of the ORing FET and be undetected by the
IR5001. The amount of undetected drain-source
current depends on the R
DS(on)
of the selected
MOSFET and its R
DS(on)
. To keep the reverse
(drain-source) current below 5 – 10% of the
nominal source-drain state, the R
DS(on)
of the
selected FET should produce 50mV to 100mV of
the voltage drop during nominal operation.
3. Cost. With properly selected R
DS(on)
, Active
ORing using IR5001 can be very cost
competitive
with
traditional
providing huge power loss reduction. For
example, a FET with 20mOhm R
DS(on)
results in
60mV voltage drop at 3A; associated power
savings compared to the traditional diode ORing
(assuming typical 0.6V forward voltage drop) is
ten fold(0.18W vs. 1.8W)! Now assume that
FET R
DS(on)
was 10mOhm. The power loss
would be reduced by additional 90mW, which is
negligible compared to the power loss reduction
already achieved with 20mOhm FET. But to get
this negligible saving, the cost of the Active
ORing FET would increase significantly.
ORing
while
Vbias
IR5001
Vcc
FETch
INP
INN
Gnd
OUT
FETst
Vline
Rbias
+
Vin +
Vin -
Load
Redundant Vin -
Vbias
IR5001
Vcc
FETch
INP
INN
Gnd
OUT
FETst
Vline
Rbias
+
Vout +
Vout -
Redundant Vout +
Load
Figure. 18. Connection of INN,INP, and Gnd when the
MOSFET is placed in the path of positive rail.
Figure. 17 Connection of INN, INP, and Gnd for negative
rail Active ORing or reverse polarity protection.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR5001SHR | 制造商:International Rectifier 功能描述:OR Controller N-Channel Single-OUT 8-Pin SOIC Tube |
| IR5001SPBF | 功能描述:IC CTRLR/MOSFET UNIV N-CH 8SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
| IR5001STR | 功能描述:IC CTRLR/MOSFET UNIV N-CH 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
| IR5001STRHR | 制造商:International Rectifier 功能描述:OR Controller N-Channel Single-OUT 8-Pin SOIC T/R |
| IR5001STRPBF | 功能描述:功率驱动器IC Universal Active ORing Controller RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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