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| 型号： | IR5001STR |
| 厂商： | International Rectifier |
| 文件页数： | 10/12页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR/MOSFET UNIV N-CH 8SOIC |
| 标准包装： | 1 |
| 应用： | -48V Dist 电源系统，AdvancedTCA ? 系统 |
| FET 型： | N 沟道 |
| 输出数： | 1 |
| 内部开关： | 无 |
| 延迟时间 - 开启： | 27µs |
| 延迟时间 - 关闭： | 130ns |
| 电源电压： | 36 V ~ 75 V |
| 电流 - 电源： | 500µA |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | IR5001SDKR |
IR5001S & (PbF)
APPLICATION INFORMATION
Positive Rail ORing / Ground ORing in
Communications Boards
The IR5001S is designed for multiple active ORing
and reverse polarity protection applications with
minimal number of external components. Examples
of typical circuit connections are shown below.
Negative Rail ORing/Reverse Polarity Protection
A typical connection of the IR5001S in negative
rail Active ORing or reverse polarity protection is
shown in Fig. 17. In this example, IR5001S is biased
directly from the positive rail. However, any of the
biasing schemes shown in Fig. 16 can be used.
For input ORing in carrier-class communications
boards, one IR5001S is used per feed. This is
shown in Fig.1. An evaluation kit is available for
typical system boards, with input voltages of
negative 36V to negative 75V, and for power levels
from 30W to about 300W. The p/n for the evaluation
kit is IRDC5001-LS48V. This evaluation kit contains
detailed design considerations and in-circuit
performance data for the IR5001S.
Vin +
IR5001
An example of a typical connection in positive
rail ORing is shown in Fig. 18. Typical applications
are inside redundant AC-DC and DC-DC power
supplies, or on-board ORing. For positive rail ORing,
an additional Vbias voltage above the positive rail is
needed to bias the IR5001S.
An evaluation kit for high-current 12V positive
rail ORing is available under p/n IRAC5001-
HS100A, demonstrating performance of the
IR5001S at 100A output current.
Considerations for the Selection of the Active
ORing N-Channel MOSFET
Active ORing FET losses are all conduction
losses, and depend on the source-drain current and
R DS(on) of the FET. The conduction loss could be
virtually eliminated if a FET with very low R DS(on)
was used. However, using arbitrarily low R DS(on) is
not desirable for three reasons:
1. Turn off propagation delay. Higher R DS(on) will
provide more voltage information to the internal
comparator, and will result in faster FET turn off
protection in case of short-circuit of the source
(less voltage disturbance on the redundant bus).
Rbias
Vline
Vcc
OUT
Gnd
2. Undetected reverse (drain to source) current
flow. With the asymmetrical offset voltage, some
Vbias
+
FETch
FETst
INN
INP
Load
small current can flow from the drain to source
of the ORing FET and be undetected by the
IR5001S. The amount of undetected drain-
source current depends on the R DS(on) of the
Vin -
Redundant Vin -
selected MOSFET and its R DS(on) . To keep the
reverse (drain-source) current below 5 – 10% of
Figure. 17 Connection of INN, INP, and Gnd for negative
rail Active ORing or reverse polarity protection.
the nominal source-drain state, the R DS(on) of
the selected FET should produce 50mV to
100mV of the voltage drop during nominal
operation.
3. Cost. With properly selected R DS(on) , Active
Vout +
IR5001
Redundant Vout +
ORing using IR5001S can be very cost
competitive with traditional ORing while
providing huge power loss reduction. For
Vline
OUT
example, a FET with 20mOhm R DS(on) results in
Rbias
Vcc
Gnd
60mV voltage drop at 3A; associated power
Vbias
+
FETch
FETst
INN
INP
Load
savings compared to the traditional diode ORing
(assuming typical 0.6V forward voltage drop) is
ten fold(0.18W vs. 1.8W)! Now assume that
Vout -
Figure. 18. Connection of INN,INP, and Gnd when the
MOSFET is placed in the path of positive rail.
www.irf.com
FET R DS(on) was 10mOhm. The power loss
would be reduced by additional 90mW, which is
negligible compared to the power loss reduction
already achieved with 20mOhm FET. But to get
this negligible saving, the cost of the Active
ORing FET would increase significantly.
10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR5001STRHR | 制造商:International Rectifier 功能描述:OR Controller N-Channel Single-OUT 8-Pin SOIC T/R |
| IR5001STRPBF | 功能描述:功率驱动器IC Universal Active ORing Controller RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR5001STRPBF-CUT TAPE | 制造商:IR 功能描述:IR5001 Series 9.6 V 3 A 130 ns Universal Active ORing Controller - SOIC-8 |
| IR5002 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 500V V(BR)CEO | 15A I(C) | TO-3 |
| IR-500-24-RG-2-SLD-SL-REF | 制造商:TE Connectivity 功能描述:IR-500-24-RG-2-SLD-SL-REF |
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