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| 型号： | IR5001STR |
| 厂商： | International Rectifier |
| 文件页数： | 8/12页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR/MOSFET UNIV N-CH 8SOIC |
| 标准包装： | 1 |
| 应用： | -48V Dist 电源系统，AdvancedTCA ? 系统 |
| FET 型： | N 沟道 |
| 输出数： | 1 |
| 内部开关： | 无 |
| 延迟时间 - 开启： | 27µs |
| 延迟时间 - 关闭： | 130ns |
| 电源电压： | 36 V ~ 75 V |
| 电流 - 电源： | 500µA |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | IR5001SDKR |
IR5001S & (PbF)
DETAILED PIN DESCRIPTION
Vline and Vcc
Vline and Vcc are the input and output pins of
the internal shunt regulator. The internal shunt
regulator regulates the Vcc voltage at ~12V. The
Vcc pin should always be by-passed with a ceramic
capacitor to the Gnd pin.
Both Vline and Vcc pins can be used for biasing
the IR5001S, as shown in Fig. 16. The Vline pin is
designed to bias the IR5001S directly when the
available bias voltage is above 25V and less than
100V (targeted at typical 36V – 75V telecom
applications). This connection is shown in Fig 16.a.
If the available Vbias voltage is lower than 25V, then
the IC must be biased using Vcc pin and an external
bias resistor as shown in Fig. 16.b. If the available
bias voltage is above 100V, both Vline and Vcc pins
can be used with an external bias resistor. For
calculation of the proper bias resistor value, see
example below.
IR5001
An example of Rbias calculation is given below.
Vbias voltages used in the example are referenced
to IR5001S Gnd:
Vbias min = 12V
Vbias max = 16V
Rbias = (Vbias min – Vcc UVLOmax) / Icc min =
= (12V – 10.7V) / 0.5mA = 2.6kOhm
Next, using a minimum Vcc (10.2V), verify that Icc
with the selected Rbias will be less than 5mA:
Icc max = (Vbias max – Vcc min)/Rbias =
= (16V - 10.2V) / 2.6kOhm = 2.23mA
Since 2.23mA is below 5mA max Icc, the calculated
Rbias (2.6kOhm) can be used in this design.
INP and INN Inputs
INP and INN are the inputs of the internal high-
speed comparator. Both pins have integrated on-
board voltage clamps and high-voltage 70kOhm
resistors.
In a typical application, INP should be connected
to the source of the N-FET and INN to the drain. To
Vline
Vcc
OUT
Gnd
improve the noise immunity, the connections from
INN and INP pins to the source and drain terminals
of the N-FET should be as short as possible.
Vbias
+
FETch
FETst
INN
INP
The (INP – INN) voltage difference determines
the state of the Vout pin of the IR5001S. When the
body diode of the Active ORing N-FET is forward-
a)
IR5001
biased and the current first starts flowing, the
voltage difference INP – INN will quickly rise toward
~700mV (typical body diode forward voltage drop).
Rbias
Vline
Vcc
OUT
Gnd
As soon as this voltage exceeds Vhyst – ? Vos ?
(27mV typical), the Vout of the IR5001S will be
pulled high, turning the channel of the active ORing
Vbias
+
FETch
FETst
INN
INP
FET on. As the channel of the N-FET becomes fully
enhanced, the (INP – INN) will reduce and stabilize
at the value determined by the source-drain current,
Isd, and Rds(on) of the N-FET:
b)
Figue 16 - Biasing options for IR5001
When the Vcc pin is used for biasing the
IR5001S, the Vbias must always be higher than the
maximum value of the Vcc UVLO threshold (10.7V).
The Rbias resistor should always be connected
between the Vbias voltage source and Vcc pin. The
Rbias resistor is selected to provide adequate Icc
current for the IC. The minimum required Icc to
guarantee proper IC operation under all conditions is
0.5mA. The maximum Icc is specified at 5mA.
www.irf.com
(INP – INN) steady state = Isd * R DS(on).
If for some reason (due to a short-circuit failure of
the source, for example), the current reverses
direction and tries to flow from drain to source, the
(INP – INN) will become negative; The IR5001S will
then quickly pull its output low, switching the ORing
FET off. For considerations regarding the selection
of the Active ORing N-FET and R DS(on) , see
Applications Information Section.
The offset voltage of the internal high-speed
comparator is centered around negative 4mV, and is
always less than 0mV. This asymmetrical offset
8
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相关代理商/技术参数 |
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|---|---|
| IR5001STRHR | 制造商:International Rectifier 功能描述:OR Controller N-Channel Single-OUT 8-Pin SOIC T/R |
| IR5001STRPBF | 功能描述:功率驱动器IC Universal Active ORing Controller RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR5001STRPBF-CUT TAPE | 制造商:IR 功能描述:IR5001 Series 9.6 V 3 A 130 ns Universal Active ORing Controller - SOIC-8 |
| IR5002 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 500V V(BR)CEO | 15A I(C) | TO-3 |
| IR-500-24-RG-2-SLD-SL-REF | 制造商:TE Connectivity 功能描述:IR-500-24-RG-2-SLD-SL-REF |
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