参数资料
型号: IR51H310
厂商: International Rectifier
文件页数: 1/7页
文件大小: 0K
描述: IC HALF BRIDGE SELF-OSC 9-SIP
标准包装: 21
类型: 半桥
导通状态电阻: 1.8 欧姆
电流 - 输出 / 通道: 700mA
安装类型: 通孔
封装/外壳: 9-SIP(7 引线)
供应商设备封装: 9-SIP,7 引线
包装: 管件
其它名称: *IR51H310
Preliminary Data Sheet No. PD60083 I
IR51H(D)224
IR51H(D)320
IR51H(D)420
SELF-OSCILLATING HALF BRIDGE
Features
Product Summary
?
?
?
?
Output Power MOSFETs in half-bridge configuration
High side gate drive designed for bootstrap operation
Bootstrap diode integrated into package (HD type)
Accurate timing control for both Power MOSFET s
VIN (max) 250V (IR51H(D)224)
400V (IR51H(D)310)
500V (IR51H(D)420)
Matched delay to get 50% duty cycle
Matched deadtime of 1.2us
? Internal oscillator with programmable frequency
Duty Cycle 50%
Deadtime 1.2 μ s
f =
1
1 . 4 × ( R T + 75 ? ) × C T
Rds(on)
1.1W (IR51H(D)224)
3.0W (IR51H(D)310)
3.6W (IR51H(D)420)
? 15.6V Zener clamped Vcc for offline operation
? Half-bridge output is out of phase with R T
? Micropower startup
Description
The IR51H(D)XXX are complete high voltage, high speed, self-
oscillating half-bridge circuits. Proprietary HVIC and latch im-
mune CMOS technologies, along with the HEXFET ? power
MOSFET technology, enable ruggedized single package construc-
tion. The front-end features a programmable oscillator which func-
tions similar to the CMOS 555 timer. The supply to the control
circuit has a zener clamp to simplify offline operation. The output
PD (TA = 25 o C)
Package
2.0W
features two HEXFETs in a half-bridge configuration with an in-
ternally set deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and low side
Typical Connection
DC Bus
power MOSFETs are matched to simplify
use in 50% duty cycle applications. The
device can operate up to 500 volts.
VIN
D1
IR51H(D)XXX
External
1
2
Vcc
R T
V B
V IN
6
9
Fast recovery diode D1 is
not required for HD type
R T
3
C T
VO
7
C T
4
COM
TO,
LOAD
COM
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