参数资料
型号: IR51H310
厂商: International Rectifier
文件页数: 3/7页
文件大小: 0K
描述: IC HALF BRIDGE SELF-OSC 9-SIP
标准包装: 21
类型: 半桥
导通状态电阻: 1.8 欧姆
电流 - 输出 / 通道: 700mA
安装类型: 通孔
封装/外壳: 9-SIP(7 引线)
供应商设备封装: 9-SIP,7 引线
包装: 管件
其它名称: *IR51H310
IR51H(D)224
IR51H(D)320
IR51H(D)420
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used
within the recommended conditions.
Symbol
V B
Definition
High side floating supply absolute voltage
Minimum
Vo + 10
Maximum
Vo + Vclamp
Units
V IN
V O
I D
High voltage supply
Half-bridge output voltage
Continuous drain current (TA = 25°C)
(TA = 85°C)
-224
-320
-420
-224
-320
-420
-224
-320
-420
-3.0 (note 2)
250
400
500
V IN
1.1
0.9
0.7
0.7
0.6
0.5
V
A
I CC
T A
Supply current
Ambient temperature
(note 3)
-40
5
125
mA
°C
NOTE 2:
Care should be taken to avoid switching conditions where the V S node flies inductively below ground by more than 5V.
NOTE 3:
Enough current should be supplied to the V CC lead of the IC to keep the internal 15.6V zener diode clamping the
voltage at this lead.
Dynamic Electrical Characteristics
V BIAS (V CC , V BS ) = 12V, TA = 25 o C unless otherwise specified.
Symbol Definition
Min.
Typ.
Max.
Units Test Conditions
trr
Reverse recovery time (MOSFET body diode)
-224
200
I F =1.1A
-320
-420
270
240
ns
I F =900mA
I F =700mA
di/dt
I F =1.1A
Qrr
D
Reverse recovery charge (MOSFET body diode) -224
-320
-420
R T duty cycle
0.7
0.6
0.5
50
μ C
%
=100
I F =900mA A/ μ s
I F =700mA
fosc = 20 kHz
3
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