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| 型号： | IRAUDAMP4 |
| 厂商： | International Rectifier |
| 文件页数： | 13/21页 |
| 文件大小： | 0K |
| 描述： | KIT 2CH 120W HALF BRDG AUDIO AMP |
| 标准包装： | 1 |
| 放大器类型： | D 类 |
| 输出类型： | 2 通道（立体声） |
| 在某负载时最大输出功率 x 通道数量： | 170W x 2 @ 4 欧姆 |
| 电源电压： | ±25 V ~ 35 V |
| 工作温度： | -40°C ~ 125°C |
| 板类型： | 完全填充 |
| 已用 IC / 零件： | IRF6645，IRS20955 |
| 已供物品： | 板 |
| 相关产品： | IRF6645TRPBFDKR-ND - MOSFET N-CH 100V 5.7A DIRECTFET IRF6645TR1PBFDKR-ND - MOSFET N-CH 100V 5.7A DIRECTFET IRF6645TRPBFCT-ND - MOSFET N-CH 100V 5.7A DIRECTFET IRF6645TR1PBFCT-ND - MOSFET N-CH 100V 5.7A DIRECTFET IRF6645TRPBFTR-ND - MOSFET N-CH 100V 5.7A DIRECTFET IRF6645TR1PBFTR-ND - MOSFET N-CH 100V 5.7A DIRECTFET |
IRS20955(S)PbF
+B
Q1
OC
REF
OCREF
5.1V
R4
0.5mA
OCSET
-
+
OC
VS
OUT
R5
OC Comparator
COM
LO
LO
Q2
IRS20955
-B
Figure 13. Low-Side Over-Current Sensing
R 5 =
? 10 k Ω
=
? 10 k Ω
Low-Side Over-Current Setting
Let the low-side MOSFET have an R DS(ON) of 100
m ? and set the current trip level to 30 A. V OCSET is
given by:
V OCSET = I TRIP+ x R DS(ON) = 30 A x 100 m Ω = 3.0 V
Choose R4+R5=10 k Ω to properly load the VREF
pin.
V OCSET
V REF
3 . 0 V
5 . 1 V
= 5 . 8 k Ω
where V REF = 5.1 V
High-side current sensing is based on the
measurement of V DS across the high-side MOFET
during high-side turn on through pins CSH and VS.
In order to avoid triggering OCP from overshoot, a
blanking interval inserted after HO turn on disables
over-current detection for 450 ns.
In contrast to low-side current sensing, the threshold
at which the CSH pin engages OC protection is
internally fixed at 1.2 V. An external resistive divider
R2 and R3 can be used to program a higher
threshold.
An external reverse blocking diode, D1, is required
to block high voltages from feeding into the CSH pin
while the high-side is off. Due to a forward voltage
drop of 0.6 V across D1, the minimum threshold
required for high-side over-current protection is 0.6
Based on the E-12 series of resistor values, choose
R5 to be 5.6 k Ω and R4 to be 3.9 k Ω to complete
the design.
V.
V CSH =
R 3
R 2 + R 3
? ( V DS ( HIGHSIDE ) + V F ( D 1 ) )
In general, R DS(ON) has a positive temperature
coefficient that needs to be considered when setting
the threshold level. Variations in R DS(ON) will affect
the selection of external or internal component
values.
where V DS(HIGH SIDE) = the drain to source voltage of
the high-side MOSFET during high-side turn on
V F(D1) = the forward drop voltage of D1
Since V DS(HIGH SIDE) is determined by the product of
drain current I D and R DS(ON) of the high-side
MOSFET. V CSH can be rewritten as:
High-Side Over-Current Sensing
For positive load currents, high-side over-current
V CSH =
R 3
R 2 + R 3
? ( R DS ( ON ) ? I D + V F ( D 1 ) )
sensing also monitors the load condition and shuts
down the switching operation if the load current
exceeds the preset trip level.
www.irf.com
Note: The reverse blocking diode D1 is forward
biased by a 10 k Ω resistor R1 when the high-side
MOSFET is on.
13
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRAUDAMP4A | 功能描述:放大器 IC 开发工具 120W x 2 Ch Class D IRS20957 IRF6645 BRD RoHS:否 制造商:International Rectifier 产品:Demonstration Boards 类型:Power Amplifiers 工具用于评估:IR4302 工作电源电压:13 V to 23 V |
| IRAUDAMP5 | 功能描述:放大器 IC 开发工具 120W x 2 Ch Class D IRS2092S IRF6645 BRD RoHS:否 制造商:International Rectifier 产品:Demonstration Boards 类型:Power Amplifiers 工具用于评估:IR4302 工作电源电压:13 V to 23 V |
| IRAUDAMP6 | 制造商:International Rectifier 功能描述:AUDIO REFERENCE DESIGN KIT FEATURING IRS20957 - Boxed Product (Development Kits) 制造商:International Rectifier 功能描述:BOARD EVAL FOR IRS20957S |
| IRAUDAMP7D | 功能描述:放大器 IC 开发工具 25W - 500W Scalable IRS2092 2-Ch BRD RoHS:否 制造商:International Rectifier 产品:Demonstration Boards 类型:Power Amplifiers 工具用于评估:IR4302 工作电源电压:13 V to 23 V |
| IRAUDAMP7S | 功能描述:放大器 IC 开发工具 25W - 500W Scalable IRS2092 Half BRG BRD RoHS:否 制造商:International Rectifier 产品:Demonstration Boards 类型:Power Amplifiers 工具用于评估:IR4302 工作电源电压:13 V to 23 V |
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