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参数资料
型号： IRF054SMD
英文描述： N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω))
中文描述： N沟道功率MOSFET（减振钢板基本：60V的，身份证（续）：45A条，的Rds（on）：0.027Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本：60V的，身份证（续）：45A条，的Rds（on） ：0.027Ω））
文件页数： 1/2页
文件大小： 22K
代理商： IRF054SMD
IRF054SMD
Prelim. 7/00
LA B
MECHANICAL DATA
Dimensions in mm (inches)
S E M E
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk
V
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
E
AS
dv/dt
T
J
, T
stg
T
L
R
q
JC
R
q
J–PCB
±20V
45A
28A
180A
100W
0.8W/°C
480mJ
4.5V/ns
–55 to 150°C
300°C
1.25°C/W
3°C/W
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
SMD1 PACKAGE
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
2) @ V
DD
= 25V , L
3
0.3mH , R
G
= 25
W
, Peak I
L
= 45A , Starting T
J
= 25°C
3) @ I
SD
￡
45A , di/dt
￡
200A/
m
s , V
DD
￡
BV
DSS
, T
J
￡
125°C , SUGGESTED R
G
= 2.35
W
N–CHANNEL
POWER MOSFET
FEATURES
HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
HIGH PACKING DENSITIES
Pad 1 – Gate
Pad 2 – Drain
Pad 3 – Source
Note:
IRFNxxx also available with
pins 1 and 3 reversed.
V
DSS
I
D(cont)
R
DS(on)
60V
45A
0.027
W
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