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参数资料
| 型号： | IRF1404L |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 162A TO-262 |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 162A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 毫欧 @ 95A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 200nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7360pF @ 25V |
| 功率 - 最大： | 3.8W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262 |
| 包装： | 管件 |
| 其它名称： | *IRF1404L |
PD -93853C
IRF1404S
IRF1404L
HEXFET ? Power MOSFET
l
Advanced Process Technology
l
l
Ultra Low On-Resistance
Dynamic dv/dt Rating
D
V DSS = 40V
Seventh Generation HEXFET Power MOSFETs from
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
?
G
S
R DS(on) = 0.004 ?
I D = 162A ?
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D 2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D 2 Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF1404L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
D 2 Pak
IRF1404S
Max.
TO-262
IRF1404L
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V ?
162 ?
I D @ T C = 100°C
I DM
P D @T A = 25°C
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
T J
T STG
Continuous Drain Current, V GS @ 10V ?
Pulsed Drain Current ??
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ?
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
115 ?
650
3.8
200
1.3
± 20
519
95
20
5.0
-55 to +175
-55 to +175
300 (1.6mm from case )
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient (PCB mounted, steady-state) *
–––
–––
0.75
40
°C/W
www.irf.com
1
5/18/01
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| IRF1404LPBF | 功能描述:MOSFET MOSFT 40V 162A 4mOhm 160nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| IRF1404SPBF | 功能描述:MOSFET 60V 1 N-CH HEXFET 4mOhms 160nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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