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参数资料
| 型号： | IRF1010EL |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 84A TO-262 |
| 产品目录绘图： | IR Hexfet TO-262 |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 84A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3210pF @ 25V |
| 功率 - 最大： | 200W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262 |
| 包装： | 管件 |
| 产品目录页面： | 1519 (CN2011-ZH PDF) |
| 其它名称： | *IRF1010EL |
PD - 91720
IRF1010ES
IRF1010EL
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Advanced Process Technology
Surface Mount (IRF1010ES)
HEXFET ? Power MOSFET
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l
l
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Low-profile through-hole (IRF1010EL)
175 ° C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
V DSS = 60V
R DS(on) = 12m ?
Description
Advanced HEXFET ? Power MOSFETs from International
Rectifier utilize advanced processing techniques to
G
S
I D = 84A ?
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D 2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D 2 Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010EL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
D 2 Pak
IRF1010ES
Max.
TO-262
IRF1010EL
Units
I D @ T C = 25 ° C
Continuous Drain Current, V GS @ 10V
84 ?
I D @ T C = 100 ° C
I DM
P D @T C = 25 ° C
V GS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ?
59
330
200
1.4
± 20
50
17
4.0
A
W
W/ ° C
V
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
-55 to + 175
300 (1.6mm from case )
10 lbf ? in (1.1N ? m)
° C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
–––
–––
0.75
40
° C/W
www.irf.com
1
02/14/02
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF1010ELPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF1010EPBF | 功能描述:MOSFET MOSFT 60V 81A 12mOhm 86.6nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF1010ES | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) |
| IRF1010ESL | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| IRF1010ESPBF | 制造商:International Rectifier 功能描述:MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 84A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 84A 3PIN D2PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 60V 84A D2-PAK 制造商:International Rectifier 功能描述:MOSFET, N, 60V, 84A, D2-PAK 制造商:International Rectifier 功能描述:MOSFET, N, 60V, 84A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation ;RoHS Compliant: Yes 制造商:International Rectifier 功能描述:MOSFET N-Channel 60V 84A D2PAK |
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