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参数资料
| 型号： | IRF1010EL |
| 厂商： | International Rectifier |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 84A TO-262 |
| 产品目录绘图： | IR Hexfet TO-262 |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 84A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3210pF @ 25V |
| 功率 - 最大： | 200W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262 |
| 包装： | 管件 |
| 产品目录页面： | 1519 (CN2011-ZH PDF) |
| 其它名称： | *IRF1010EL |
IRF1010ES/IRF1010EL
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
? V (BR)DSS / ? T J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
60
–––
–––
0.064
–––
–––
V V GS = 0V, I D = 250μA
V/ ° C Reference to 25 ° C, I D = 1mA
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
12 m ?
V GS = 10V, I D = 50A
?
V GS(th)
Gate Threshold Voltage
2.0
–––
4.0 V V DS = V GS , I D = 250μA
g fs
Forward Transconductance
69
–––
–––
S V DS = 25V, I D = 50A ?
I DSS
I GSS
Q g
Q gs
Q gd
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
25 V DS = 60V, V GS = 0V
μA
250 V DS = 48V, V GS = 0V, T J = 150 ° C
100 V GS = 20V
nA
-100 V GS = -20V
130 I D = 50A
28 nC V DS = 48V
44 V GS = 10V, See Fig. 6 and 13
t d(on)
Turn-On Delay Time
–––
12
–––
V DD = 30V
t r
t d(off)
t f
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
78
48
53
–––
–––
–––
ns
I D = 50A
R G = 3.6 ?
V GS = 10V, See Fig. 10 ?
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5 –––
7.5 –––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
C iss
Input Capacitance
–––
3210 –––
V GS = 0V
C oss
Output Capacitance
–––
690
–––
V DS = 25V
C rss
Reverse Transfer Capacitance
–––
140
–––
pF
? = 1.0MHz, See Fig. 5
E AS
Single Pulse Avalanche Energy ?
–––
1180 ? 320 ?
mJ I AS = 50A, L = 260μH
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
84 ?
integral reverse
I S
I SM
V SD
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
Diode Forward Voltage
––– –––
––– –––
––– –––
MOSFET symbol
showing the
A
G
330
p-n junction diode.
1.3 V T J = 25 ° C, I S = 50A, V GS = 0V ?
D
S
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
73 110 ns T J = 25 ° C, I F = 50A
220 330 nC di/dt = 100A/μs ?
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
? Starting T J = 25 ° C, L = 260μH
R G = 25 ? , I AS = 50A, V GS =10V
(See Figure 12)
? I SD ≤ 50A, di/dt ≤ 230A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175 ° C
? Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
? This is a typical value at device destruction and represents
operation outside rated limits.
? This is a calculated value limited to T J = 175 ° C .
? Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
www.irf.com
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