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参数资料
| 型号： | IRF250SMD |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | N.CHANNEL POWER MOSFET |
| 中文描述： | 22 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HERMETIC SEALED, SMD1, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 22K |
| 代理商： | IRF250SMD |
IRF250
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/96
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
200
0.029
0.085
0.090
4
2
9
25
250
100
–100
3500
700
110
55
8
30
115
22
60
35
190
170
130
30
120
1.9
950
9.0
Negligible
5.0
13
0.83
0.12
30
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
> 15V
V
GS
= 0
I
D
= 1mA
I
D
= 19A
I
D
= 30A
I
D
= 250mA
I
D
= 19A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 30A
V
DS
= 0.5BV
DSS
V
DD
= 100V
I
D
= 30A
R
G
= 2.35
I
S
= 30A
V
GS
= 0
I
F
= 30A
d
i
/ d
t
≤
100A/
μ
s V
DD
≤
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
Forward Turn–On Time
PACKAGE CHARACTERISTICS
V
V/°C
V
S (
é
)
μA
nA
pF
nC
ns
A
V
ns
μC
nH
°C/W
BV
DSS
BV
DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
R
θ
JC
R
θ
CS
R
θ
JA
Notes
1) Pulse Test: Pulse Width
≤
300ms,
δ ≤
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Internal Drain Inductance
(measured from 6mm down drain lead to centre of die)
Internal Source Inductance
(from 6mm down source lead to source bond pad)
THERMAL CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Case – Sink
Thermal Resistance Junction – Ambient
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相关代理商/技术参数 |
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|---|---|
| IRF251 | 制造商:Motorola Inc 功能描述: |
| IRF251R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 30A I(D) | TO-204AE |
| IRF252 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:N-CHANNEL POWER MOSFETS |
| IRF2525 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 20A I(D) | TO-220AB |
| IRF252R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-204AE |
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