| 型号 | 厂商 | 描述 |
| irf140smd 2 3 4 5 |
SEMELAB LTD | N-CHANNEL POWER MOSFET |
| irf250 2 |
SEMELAB LTD | N-CHANNEL POWER MOSFET |
| irf250 2 |
SAMSUNG SEMICONDUCTOR CO. LTD. | N-CHANNEL POWER MOSFETS |
| irf250 2 |
Electronic Theatre Controls, Inc. | 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED |
| irf250 2 |
HARRIS SEMICONDUCTOR | 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET |
| irf250smd 2 |
SEMELAB LTD | N.CHANNEL POWER MOSFET |
| irf510a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | Advanced Power MOSFET |
| irf520a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为100V，导通电阻为0.2Ω，漏电流为9.2A）) |
| irf540a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | Advanced Power MOSFET |
| irf614 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）) |
| irf620a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为0.8Ω，漏电流为5A）) |
| irf634s 2 3 4 5 6 7 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
| irf634 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）) |
| irf640a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | L E D,YELLOW,50 DEG VIEW ANGLE |
| irf644 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | 250V N-Channel MOSFET |
| irf644 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) |
| irf644n 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) |
| irf644nl 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) |
| irf644ns 2 3 4 5 6 7 8 9 10 |
International Rectifier | Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) |
| irf644nstrl 2 3 4 5 6 7 8 9 10 |
International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB |
| irf644nstrr 2 3 4 5 6 7 8 9 10 |
International Rectifier | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB |
| irf644b 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | 250V N-Channel MOSFET |
| irfs644b 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | 250V N-Channel MOSFET |
| irf650a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为0.85Ω，漏电流为28A）) |
| irf710-713 2 3 4 5 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 2.25A, 350-400V |
| irf711 2 3 4 5 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 2.25A, 350-400V |
| irf712 2 3 4 5 |
Fairchild Semiconductor Corporation | TRI CON SKT 14 GLD ST/LO |
| irf713 2 3 4 5 |
Fairchild Semiconductor Corporation | Connector Contact,SKT,CRIMP Terminal |
| irf710b 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | 400V N-Channel MOSFET |
| irfs710b 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | 400V N-Channel MOSFET |
| irf710 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为400V，导通电阻为3.6Ω，漏电流为2A）) |
| irf720a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为400V，导通电阻为1.8Ω，漏电流为3.3A）) |
| irf7401 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Analog Devices, Inc. | Thermoelectric Cooler Controller |
| irf7404 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
International Rectifier | HEXFET Power MOSFET |
| irf7401 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
International Rectifier | Power MOSFET(Vdss=20V, Rds(on)=0.022ohm) |
| irf7404 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Analog Devices, Inc. | Thermoelectric Cooler Controller |
| irf7233 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Analog Devices, Inc. | Thermoelectric Cooler Controller |
| irf750a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为400V，导通电阻为0.3Ω，漏电流为15A）) |
| irf750 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为400V，导通电阻为0.3Ω，漏电流为15A）) |
| irf820a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为500V，导通电阻为3.0Ω，漏电流为2.5A）) |
| irf820s 2 3 4 5 6 7 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为500V，导通电阻为3.0Ω，漏电流为2.5A）) |
| irf840s 2 3 4 5 6 7 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为500V，导通电阻为0.85Ω，漏电流为8A）) |
| irf9521 2 |
Supertex, Inc. | P-Channel Enhancement-Mode Vertical DMOS Power FETs |
| irf9522 2 |
Supertex, Inc. | P-Channel Enhancement-Mode Vertical DMOS Power FETs |
| irf9523 2 |
Supertex, Inc. | P-Channel Enhancement-Mode Vertical DMOS Power FETs |
| irfd120 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET |
| irfd120 2 3 4 5 6 7 |
Harris Corporation | 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs |
| irfd120 2 3 4 5 6 7 |
INTERSIL CORP | 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET |
| irfd120 2 3 4 5 6 7 |
International Rectifier | Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A) |
| irfd9014pbf 2 3 4 5 6 7 8 9 |
VISHAY SEMICONDUCTORS | MOSFET P-CH 60V 1.1A 4-DIP |