- 您现在的位置：买卖IC网 > PDF目录378636 > IRF710 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为400V，导通电阻为3.6Ω，漏电流为2A）) PDF资料下载
参数资料
| 型号： | IRF710 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为400V，导通电阻为3.6Ω，漏电流为2A）) |
| 中文描述： | 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 1/7页 |
| 文件大小： | 236K |
| 代理商： | IRF710 |
IRF710
BV
DSS
= 400 V
R
DS(on)
= 3.6
I
D
= 2 A
400
2
1.3
6
±
30
114
2
3.6
4.0
36
0.29
- 55 to +150
300
3.44
--
62.5
--
0.5
--
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10
μ
A (Max.) @ V
DS
= 400V
Low R
DS(ON)
: 2.815
(Typ.)
$GYDQFHG 3RZHU 026)(7
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
θ
JC
R
θ
CS
R
θ
JA
°
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
°
C)
Continuous Drain Current (T
C
=100
°
C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T
C
=25
°
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
°
C
A
°
C
TO-220
1.Gate 2. Drain 3. Source
3
2
1
1999 Fairchild Semiconductor Corporation
Rev. B
相关PDF资料 |
PDF描述 |
|---|---|
| IRF720A | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为400V，导通电阻为1.8Ω，漏电流为3.3A）) |
| IRF7401 | Thermoelectric Cooler Controller |
| IRF7404 | HEXFET Power MOSFET |
| IRF7401 | Power MOSFET(Vdss=20V, Rds(on)=0.022ohm) |
| IRF7404 | Thermoelectric Cooler Controller |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF710_R4943 | 功能描述:MOSFET TO-220AB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7101 | 制造商:International Rectifier 功能描述:MOSFET DUAL NN LOGIC SO-8 |
| IRF7101HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 3.5A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 20V 3.5A 8SOIC - Rail/Tube |
| IRF7101PBF | 功能描述:MOSFET 20V DUAL N-CH HEXFET 100mOhms 10nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7101TR | 制造商:International Rectifier 功能描述: |
发布紧急采购，3分钟左右您将得到回复。