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| 型号： | IRF840S |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为500V，导通电阻为0.85Ω，漏电流为8A）) |
| 中文描述： | N沟道功率MOSFET（不适用沟道增强型功率马鞍山场效应管（漏源电压为500V及导通电阻为0.85Ω，漏电流为8A）条） |
| 文件页数： | 2/7页 |
| 文件大小： | 234K |
| 代理商： | IRF840S |
IRF840S
500
--
2.0
--
--
--
--
--
0.66
--
--
--
--
--
150
66
18
22
83
30
57
7.5
28.4
--
--
4.0
100
-100
10
100
0.85
--
1550
175
75
45
55
175
70
74
--
--
6.8
1190
--
--
--
370
3.9
8
32
1.4
--
--
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=18mH, I
AS
=8A, V
DD
=50V, R
G
=27
, Starting T
J
=25
°
C
(3) I
SD
≤
8A, di/dt
≤
160A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
=25
°
C
(4) Pulse Test: Pulse Width = 250
μ
s, Duty Cycle
≤
2%
(5) Essentially Independent of Operating Temperature
1&+$11(/
32:(5 026)(7
Electrical Characteristics
(T
C
=25
°
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
°
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
μ
A
I
D
=250
μ
A
See Fig 7
V
DS
=5V,I
D
=250
μ
A
V
GS
=30V
V
GS
=-30V
V
DS
=500V
V
DS
=400V,T
C
=125
°
C
V
GS
=10V,I
D
=4A
(4)
V
DS
=50V,I
D
=4A
(4)
V
DD
=250V,I
D
=8A,
R
G
=9.1
See Fig 13
(4) (5)
V
DS
=400V,V
GS
=10V,
I
D
=8A
See Fig 6 & Fig 12
(4) (5)
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
(1)
Diode Forward Voltage
(4)
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
°
C,I
S
=8A,V
GS
=0V
T
J
=25
°
C,I
F
=8A
di
F
/dt=100A/
μ
s
(4)
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|---|---|
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