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| 型号： | IRF644 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.28ohm，身份证\u003d 14A条） |
| 文件页数： | 10/10页 |
| 文件大小： | 900K |
| 代理商： | IRF644 |
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相关PDF资料 |
PDF描述 |
|---|---|
| IRF644N | Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) |
| IRF644NL | Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) |
| IRF644NS | Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) |
| IRF644NSTRL | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB |
| IRF644NSTRR | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF644A | 制造商:Samsung Semiconductor 功能描述: |
| IRF644B | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| IRF644B_FP001 | 功能描述:MOSFET 250V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF644FP | 功能描述:MOSFET N-Ch 250 Volt 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF644L | 功能描述:MOSFET N-CH 250V 14A TO-262 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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